JPS5571692A - Single crystal silicon growing method - Google Patents

Single crystal silicon growing method

Info

Publication number
JPS5571692A
JPS5571692A JP14237478A JP14237478A JPS5571692A JP S5571692 A JPS5571692 A JP S5571692A JP 14237478 A JP14237478 A JP 14237478A JP 14237478 A JP14237478 A JP 14237478A JP S5571692 A JPS5571692 A JP S5571692A
Authority
JP
Japan
Prior art keywords
sapphire
silicon
substrate
laser
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14237478A
Other languages
Japanese (ja)
Inventor
Masahiko Kogirima
Michiyoshi Maki
Masao Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14237478A priority Critical patent/JPS5571692A/en
Publication of JPS5571692A publication Critical patent/JPS5571692A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To accelerate the operation speed of a semiconductor device as compared to a conventional one by applying laser beams to an amorphous silicon film coated on a sapphire or spinel crystal to epitaxial-grow silicon.
CONSTITUTION: On sapphire substrate 1, less than about 1μ thick silicon layer 2 is coated by thermal decomposition of monosilane (SiH4) or other means such as sputtering or vacuum deposition. By applying carbon dioxide gas laser 3 of about 1J/cm2 to layer 2 from the surface, annealing is carried out. Laser 3' may be applied from the substrate side. Thus, amorphous silicon 2 is single-crystallized by epitaxial growth on sapphire 1. Unlike a usual SOS crystal little impurities such as Al are taken in from the substrate, resulting in high purity silicon.
COPYRIGHT: (C)1980,JPO&Japio
JP14237478A 1978-11-20 1978-11-20 Single crystal silicon growing method Pending JPS5571692A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14237478A JPS5571692A (en) 1978-11-20 1978-11-20 Single crystal silicon growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14237478A JPS5571692A (en) 1978-11-20 1978-11-20 Single crystal silicon growing method

Publications (1)

Publication Number Publication Date
JPS5571692A true JPS5571692A (en) 1980-05-29

Family

ID=15313884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14237478A Pending JPS5571692A (en) 1978-11-20 1978-11-20 Single crystal silicon growing method

Country Status (1)

Country Link
JP (1) JPS5571692A (en)

Similar Documents

Publication Publication Date Title
JPS6432622A (en) Formation of soi film
JPS54157485A (en) Planar semiconductor device
JPS54157779A (en) Production of silicon single crystal
JPS5571692A (en) Single crystal silicon growing method
JPS538374A (en) Growing method for single crystal of semiconductor
JPS57159017A (en) Manufacture of semiconductor single crystal film
JPS5659700A (en) Forming method for gallium nitride single crystal thin film
JPS6459807A (en) Material for thin-film transistor
JPS6477924A (en) Manufacture of semiconductor device
JPS6427222A (en) Manufacture of thin single crystalline film
JPS55149195A (en) Manufacture of silicon carbide substrate
JPS55149193A (en) Manufacture of silicon carbide substrate
JPS57211737A (en) Manufacture of semiconductor substrate
JPS5462777A (en) Production of compound semiconductor thin films
JPS6451620A (en) Vapor growth method
JPS5543882A (en) Gaseous-phase growing of compound semiconductor epitaxial film
JPS5234668A (en) Gaseous phase growing process of semiconductor
JPS6481308A (en) Formation of semiconductor thin film
JPS57128973A (en) Semiconductor element and its manufacture
JPS57194519A (en) Method of crystal growth
JPS55149192A (en) Manufacture of silicon carbide crystal layer
JPS57196521A (en) Growing method of crystal
JPS53108766A (en) Vapor phase growth method of sos film
JPS57196793A (en) Epitaxial growth method
JPS533062A (en) Semiconductor crystal growth apparatus