JPS5571692A - Single crystal silicon growing method - Google Patents
Single crystal silicon growing methodInfo
- Publication number
- JPS5571692A JPS5571692A JP14237478A JP14237478A JPS5571692A JP S5571692 A JPS5571692 A JP S5571692A JP 14237478 A JP14237478 A JP 14237478A JP 14237478 A JP14237478 A JP 14237478A JP S5571692 A JPS5571692 A JP S5571692A
- Authority
- JP
- Japan
- Prior art keywords
- sapphire
- silicon
- substrate
- laser
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To accelerate the operation speed of a semiconductor device as compared to a conventional one by applying laser beams to an amorphous silicon film coated on a sapphire or spinel crystal to epitaxial-grow silicon.
CONSTITUTION: On sapphire substrate 1, less than about 1μ thick silicon layer 2 is coated by thermal decomposition of monosilane (SiH4) or other means such as sputtering or vacuum deposition. By applying carbon dioxide gas laser 3 of about 1J/cm2 to layer 2 from the surface, annealing is carried out. Laser 3' may be applied from the substrate side. Thus, amorphous silicon 2 is single-crystallized by epitaxial growth on sapphire 1. Unlike a usual SOS crystal little impurities such as Al are taken in from the substrate, resulting in high purity silicon.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14237478A JPS5571692A (en) | 1978-11-20 | 1978-11-20 | Single crystal silicon growing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14237478A JPS5571692A (en) | 1978-11-20 | 1978-11-20 | Single crystal silicon growing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5571692A true JPS5571692A (en) | 1980-05-29 |
Family
ID=15313884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14237478A Pending JPS5571692A (en) | 1978-11-20 | 1978-11-20 | Single crystal silicon growing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5571692A (en) |
-
1978
- 1978-11-20 JP JP14237478A patent/JPS5571692A/en active Pending
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