JPS5423467A - Singlecrystal growing method for binary semiconductor - Google Patents
Singlecrystal growing method for binary semiconductorInfo
- Publication number
- JPS5423467A JPS5423467A JP8911177A JP8911177A JPS5423467A JP S5423467 A JPS5423467 A JP S5423467A JP 8911177 A JP8911177 A JP 8911177A JP 8911177 A JP8911177 A JP 8911177A JP S5423467 A JPS5423467 A JP S5423467A
- Authority
- JP
- Japan
- Prior art keywords
- singlecrystal
- growing method
- binary semiconductor
- lead
- ample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Bipolar Transistors (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To establish greater crystal of excellent quality, by removing unnecessary impurity in an ample and by performing crystal-growing with free condition without contacting the tube wall of the ample, in the singlecrystal growing method for binary semiconductor including lead such as lead sulfide and telluric lead.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8911177A JPS5423467A (en) | 1977-07-25 | 1977-07-25 | Singlecrystal growing method for binary semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8911177A JPS5423467A (en) | 1977-07-25 | 1977-07-25 | Singlecrystal growing method for binary semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5423467A true JPS5423467A (en) | 1979-02-22 |
JPS5627480B2 JPS5627480B2 (en) | 1981-06-25 |
Family
ID=13961771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8911177A Granted JPS5423467A (en) | 1977-07-25 | 1977-07-25 | Singlecrystal growing method for binary semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5423467A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5427767A (en) * | 1977-08-03 | 1979-03-02 | Fujitsu Ltd | Single crystal growing method of multielement semiconductors |
JP2002275000A (en) * | 2001-03-14 | 2002-09-25 | Res Inst Electric Magnetic Alloys | Method of growing high-quality bulk single crystal having highly flat facet |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57155383U (en) * | 1981-03-25 | 1982-09-29 |
-
1977
- 1977-07-25 JP JP8911177A patent/JPS5423467A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5427767A (en) * | 1977-08-03 | 1979-03-02 | Fujitsu Ltd | Single crystal growing method of multielement semiconductors |
JPS5754480B2 (en) * | 1977-08-03 | 1982-11-18 | ||
JP2002275000A (en) * | 2001-03-14 | 2002-09-25 | Res Inst Electric Magnetic Alloys | Method of growing high-quality bulk single crystal having highly flat facet |
Also Published As
Publication number | Publication date |
---|---|
JPS5627480B2 (en) | 1981-06-25 |
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