JPS5618412A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS5618412A
JPS5618412A JP9453079A JP9453079A JPS5618412A JP S5618412 A JPS5618412 A JP S5618412A JP 9453079 A JP9453079 A JP 9453079A JP 9453079 A JP9453079 A JP 9453079A JP S5618412 A JPS5618412 A JP S5618412A
Authority
JP
Japan
Prior art keywords
silicon substrate
back surface
layer
substrate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9453079A
Other languages
Japanese (ja)
Inventor
Masamichi Yoshida
Kazunori Imaoka
Atsuo Iida
Yunosuke Kawabe
Hideo Kashimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9453079A priority Critical patent/JPS5618412A/en
Publication of JPS5618412A publication Critical patent/JPS5618412A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Abstract

PURPOSE:To prevent the yield of fine defects during forming process of the element by forming a damaged layer on the back surface of a substrate before an element is formed on the upper surface of the semiconductor substrate and forming the semiconductor layer on the back surface so that the semiconductor layer with a specified thickness is obtained. CONSTITUTION:The back surface 2 of a silicon substrate 1 is lapped by using, e.g., 1,200 mesh alumina and the surface is roughened. Then, the damaged layer 4 is formed. In lapping, the silicon substrate 1 is excessively cut out, and the thickness of 200-250mum is obtained. Then, a silicon layer 5 is formed on the back surface of the silicon substrate, and the silicon substrate with a specified thickness is obtained. Thereafter, an element is provided on the upper surface of the silicon substrate 1 by an ordinary method. In this method, since fine defects yielded in the element forming process such as a heating process and the like are effectively absorbed, the number of the defects are decreased, and the yield rate of the element formation can be improved.
JP9453079A 1979-07-25 1979-07-25 Manufacture of semiconductor element Pending JPS5618412A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9453079A JPS5618412A (en) 1979-07-25 1979-07-25 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9453079A JPS5618412A (en) 1979-07-25 1979-07-25 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5618412A true JPS5618412A (en) 1981-02-21

Family

ID=14112879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9453079A Pending JPS5618412A (en) 1979-07-25 1979-07-25 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5618412A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57169249A (en) * 1981-04-09 1982-10-18 Nec Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126866A (en) * 1977-04-13 1978-11-06 Hitachi Ltd Production of semiconductor wafers

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126866A (en) * 1977-04-13 1978-11-06 Hitachi Ltd Production of semiconductor wafers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57169249A (en) * 1981-04-09 1982-10-18 Nec Corp Manufacture of semiconductor device

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