JPS51140470A - Method of cutting semiconductor crystal - Google Patents
Method of cutting semiconductor crystalInfo
- Publication number
- JPS51140470A JPS51140470A JP6429275A JP6429275A JPS51140470A JP S51140470 A JPS51140470 A JP S51140470A JP 6429275 A JP6429275 A JP 6429275A JP 6429275 A JP6429275 A JP 6429275A JP S51140470 A JPS51140470 A JP S51140470A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor crystal
- cutting semiconductor
- cutting
- surface polishing
- polishing treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To reduce working strain in wafer fabricating step by cutting semiconductor crystal by utilizing electrochemical process to omit surface polishing treatment thereafter.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6429275A JPS51140470A (en) | 1975-05-30 | 1975-05-30 | Method of cutting semiconductor crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6429275A JPS51140470A (en) | 1975-05-30 | 1975-05-30 | Method of cutting semiconductor crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51140470A true JPS51140470A (en) | 1976-12-03 |
Family
ID=13254005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6429275A Pending JPS51140470A (en) | 1975-05-30 | 1975-05-30 | Method of cutting semiconductor crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51140470A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09193137A (en) * | 1996-01-16 | 1997-07-29 | Cree Res Inc | Production of silicon carbide wafer and wafer of 4h silicon carbide |
US6242709B1 (en) | 1998-07-29 | 2001-06-05 | Sumitomo Special Metals Co., Ltd. | Method for manufacturing conductive wafers, method for manufacturing thin-plate sintered compacts, method for manufacturing ceramic substrates for thin-film magnetic head, and method for machining conductive wafers |
-
1975
- 1975-05-30 JP JP6429275A patent/JPS51140470A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09193137A (en) * | 1996-01-16 | 1997-07-29 | Cree Res Inc | Production of silicon carbide wafer and wafer of 4h silicon carbide |
US6242709B1 (en) | 1998-07-29 | 2001-06-05 | Sumitomo Special Metals Co., Ltd. | Method for manufacturing conductive wafers, method for manufacturing thin-plate sintered compacts, method for manufacturing ceramic substrates for thin-film magnetic head, and method for machining conductive wafers |
CN1101738C (en) * | 1998-07-29 | 2003-02-19 | 住友特殊金属株式会社 | Production of sintered conductive thin-sheet and thin-plate and ceramic substrate and processing method thereof |
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