JPS5656020A - Manufacture of elastic surface wave device - Google Patents
Manufacture of elastic surface wave deviceInfo
- Publication number
- JPS5656020A JPS5656020A JP13180379A JP13180379A JPS5656020A JP S5656020 A JPS5656020 A JP S5656020A JP 13180379 A JP13180379 A JP 13180379A JP 13180379 A JP13180379 A JP 13180379A JP S5656020 A JPS5656020 A JP S5656020A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- main surface
- camber
- yield
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
PURPOSE:To improve characteristics and yield by reducing bad conditions such as camber as much as possible by roughening the 2nd main surface of a wafer and then by etching the wafer before mirror-finishing the 1st main surface where input and output electrodes are to be formed. CONSTITUTION:An LiTaO3 signle crystal is cut into a prescribed wafer. Of this wafer, the 2nd main surface 5 opposing to the 1st main surface 2 where input and output electrodes are to be formed is roughened by manual sliding and honing work. Next, a solution having a 1:2 ratio of HF to HNO3 is used to etch the wafer at the room temperature for 15 minutes and after curvature is removed, electrodes are formed on this wafer to improve the yield while maintaining prescribed excellent characteristics. Namely, provess etching provides better results with regard to removal of camber and prevention of cracking in handling.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13180379A JPS5656020A (en) | 1979-10-15 | 1979-10-15 | Manufacture of elastic surface wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13180379A JPS5656020A (en) | 1979-10-15 | 1979-10-15 | Manufacture of elastic surface wave device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5656020A true JPS5656020A (en) | 1981-05-16 |
Family
ID=15066468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13180379A Pending JPS5656020A (en) | 1979-10-15 | 1979-10-15 | Manufacture of elastic surface wave device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5656020A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003017983A (en) * | 2001-06-28 | 2003-01-17 | Kyocera Corp | Wafer for elastic wave and elastic wave device employing the same |
-
1979
- 1979-10-15 JP JP13180379A patent/JPS5656020A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003017983A (en) * | 2001-06-28 | 2003-01-17 | Kyocera Corp | Wafer for elastic wave and elastic wave device employing the same |
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