JPS5723217A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5723217A
JPS5723217A JP9839780A JP9839780A JPS5723217A JP S5723217 A JPS5723217 A JP S5723217A JP 9839780 A JP9839780 A JP 9839780A JP 9839780 A JP9839780 A JP 9839780A JP S5723217 A JPS5723217 A JP S5723217A
Authority
JP
Japan
Prior art keywords
layer
single crystal
noncrystal
grooves
concaved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9839780A
Other languages
Japanese (ja)
Inventor
Tsutomu Ogawa
Hajime Kamioka
Motoo Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9839780A priority Critical patent/JPS5723217A/en
Publication of JPS5723217A publication Critical patent/JPS5723217A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain single crystal regions which are isorated each other by a method wherein a protruded section is provided on the surface of an insulating substrate, a noncrystal layer is superposed thereon and a single crystallization is performed by irradiating a laser beam. CONSTITUTION:A selective etching is performed on a plurality of concaved grooves 22 on the SiO2 substrate 21 having a flat surface and the grooves are covered with a noncrystal or polycrystalline Si 23. When a laser annealing is performed on the above, a single crystal Si layer 33 having a flattened surface is formed. Then, the layer 33 is removed by performing machie grinding and single crystal Si layers 33A, 33B and 33C, which are insulated and isolated for every concaved section, are completed. Subsequently, the required element is formed on each single layer using a commonly used method and a high degree of integrated device can be formed.
JP9839780A 1980-07-18 1980-07-18 Manufacture of semiconductor device Pending JPS5723217A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9839780A JPS5723217A (en) 1980-07-18 1980-07-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9839780A JPS5723217A (en) 1980-07-18 1980-07-18 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5723217A true JPS5723217A (en) 1982-02-06

Family

ID=14218696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9839780A Pending JPS5723217A (en) 1980-07-18 1980-07-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5723217A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0475505U (en) * 1990-11-15 1992-07-01
US5726084A (en) * 1993-06-24 1998-03-10 Northern Telecom Limited Method for forming integrated circuit structure
JP2004088084A (en) * 2002-06-25 2004-03-18 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
US7737506B2 (en) 2002-01-28 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7795734B2 (en) 2002-01-28 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE IEDM TECHNICAL DIGEST=1979 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0475505U (en) * 1990-11-15 1992-07-01
US5726084A (en) * 1993-06-24 1998-03-10 Northern Telecom Limited Method for forming integrated circuit structure
US7737506B2 (en) 2002-01-28 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7795734B2 (en) 2002-01-28 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP2011101057A (en) * 2002-01-28 2011-05-19 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2019068092A (en) * 2002-01-28 2019-04-25 株式会社半導体エネルギー研究所 Semiconductor element
JP2004088084A (en) * 2002-06-25 2004-03-18 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device

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