JPS5723217A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5723217A
JPS5723217A JP9839780A JP9839780A JPS5723217A JP S5723217 A JPS5723217 A JP S5723217A JP 9839780 A JP9839780 A JP 9839780A JP 9839780 A JP9839780 A JP 9839780A JP S5723217 A JPS5723217 A JP S5723217A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
layer
performed
formed
single crystal
single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9839780A
Inventor
Hajime Kamioka
Motoo Nakano
Tsutomu Ogawa
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/02428Structure
    • H01L21/0243Surface structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2022Epitaxial regrowth of non-monocrystalline semiconductor materials, e.g. lateral epitaxy by seeded solidification, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline materials
    • H01L21/2026Epitaxial regrowth of non-monocrystalline semiconductor materials, e.g. lateral epitaxy by seeded solidification, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline materials using a coherent energy beam, e.g. laser or electron beam

Abstract

PURPOSE:To obtain single crystal regions which are isorated each other by a method wherein a protruded section is provided on the surface of an insulating substrate, a noncrystal layer is superposed thereon and a single crystallization is performed by irradiating a laser beam. CONSTITUTION:A selective etching is performed on a plurality of concaved grooves 22 on the SiO2 substrate 21 having a flat surface and the grooves are covered with a noncrystal or polycrystalline Si 23. When a laser annealing is performed on the above, a single crystal Si layer 33 having a flattened surface is formed. Then, the layer 33 is removed by performing machie grinding and single crystal Si layers 33A, 33B and 33C, which are insulated and isolated for every concaved section, are completed. Subsequently, the required element is formed on each single layer using a commonly used method and a high degree of integrated device can be formed.
JP9839780A 1980-07-18 1980-07-18 Manufacture of semiconductor device Pending JPS5723217A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9839780A JPS5723217A (en) 1980-07-18 1980-07-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9839780A JPS5723217A (en) 1980-07-18 1980-07-18 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5723217A true true JPS5723217A (en) 1982-02-06

Family

ID=14218696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9839780A Pending JPS5723217A (en) 1980-07-18 1980-07-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5723217A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0475505U (en) * 1990-11-15 1992-07-01
US5726084A (en) * 1993-06-24 1998-03-10 Northern Telecom Limited Method for forming integrated circuit structure
JP2004088084A (en) * 2002-06-25 2004-03-18 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
US7737506B2 (en) 2002-01-28 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7795734B2 (en) 2002-01-28 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE IEDM TECHNICAL DIGEST=1979 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0475505U (en) * 1990-11-15 1992-07-01
US5726084A (en) * 1993-06-24 1998-03-10 Northern Telecom Limited Method for forming integrated circuit structure
US7737506B2 (en) 2002-01-28 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7795734B2 (en) 2002-01-28 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP2011101057A (en) * 2002-01-28 2011-05-19 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2004088084A (en) * 2002-06-25 2004-03-18 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device

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