JPS5651830A - Glassivating method for bevel-type semiconductor element - Google Patents
Glassivating method for bevel-type semiconductor elementInfo
- Publication number
- JPS5651830A JPS5651830A JP12767179A JP12767179A JPS5651830A JP S5651830 A JPS5651830 A JP S5651830A JP 12767179 A JP12767179 A JP 12767179A JP 12767179 A JP12767179 A JP 12767179A JP S5651830 A JPS5651830 A JP S5651830A
- Authority
- JP
- Japan
- Prior art keywords
- bevel
- substrate
- type semiconductor
- main surface
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To permit a bevel-type semiconductor element to be glassivated by performing glassivation with bevel-type semiconductor elements maintained as a wafer by means of glass layers until the last process. CONSTITUTION:A bevel-type semiconductor element is formed on a semiconductor substrate 1 being a wafer. After emitter and base electrode openings 8 and 9 are made in a thermal oxide film 6 on one main surface of the substrate 1, a thick glass layer 10 is formed. Then the substrate 1 is bevel-etched from the other main surface. The bevel etch is performed until etching grooves 12 reach one main surface of the substrate 1. Pellets separated by the bevel etch are maintained as a wafer by means of the layer 10. Then each bevel surface is coated with a glass layer 13, and an electrode 14 is formed on the other main surface of the substrate 1. Each groove 12 is filled with glass layer 15. Then the layer 10 is removed, and base and emitter electrodes 16 and 17 are formed. After that, the glass layer 15 are removed to separate the pellets into pieces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12767179A JPS5651830A (en) | 1979-10-02 | 1979-10-02 | Glassivating method for bevel-type semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12767179A JPS5651830A (en) | 1979-10-02 | 1979-10-02 | Glassivating method for bevel-type semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5651830A true JPS5651830A (en) | 1981-05-09 |
Family
ID=14965831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12767179A Pending JPS5651830A (en) | 1979-10-02 | 1979-10-02 | Glassivating method for bevel-type semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5651830A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59107112A (en) * | 1982-12-10 | 1984-06-21 | Mitsubishi Heavy Ind Ltd | Detecting method of burnout point of refuse incinerator |
| JPS59131825A (en) * | 1983-01-17 | 1984-07-28 | Mitsubishi Heavy Ind Ltd | Combustion finishing point detecting device |
-
1979
- 1979-10-02 JP JP12767179A patent/JPS5651830A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59107112A (en) * | 1982-12-10 | 1984-06-21 | Mitsubishi Heavy Ind Ltd | Detecting method of burnout point of refuse incinerator |
| JPS59131825A (en) * | 1983-01-17 | 1984-07-28 | Mitsubishi Heavy Ind Ltd | Combustion finishing point detecting device |
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