JPS57184216A - Forming impurity diffusion layer on surface of semiconductor element substrate - Google Patents
Forming impurity diffusion layer on surface of semiconductor element substrateInfo
- Publication number
- JPS57184216A JPS57184216A JP3956482A JP3956482A JPS57184216A JP S57184216 A JPS57184216 A JP S57184216A JP 3956482 A JP3956482 A JP 3956482A JP 3956482 A JP3956482 A JP 3956482A JP S57184216 A JPS57184216 A JP S57184216A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- impurity
- thin film
- layer
- high density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 title abstract 11
- 239000012535 impurity Substances 0.000 title abstract 9
- 239000000758 substrate Substances 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 abstract 7
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000003973 paint Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To produce efficiently a semiconductor element with low sheet resistance at a high uniformity and reproducibility by diffusion from a thin film multiple layer comprising a thin layer containing impurity of high density. CONSTITUTION:After a first layer thin film A comprising silicon oxide film containing no diffusion impurity has been formed on a substrate of N type silicon, paint material containing boron trioxide is formed as a second layer thin film B containing diffusion impurity of high density and further ethyl silicate is formed as a third layer thin film A' containing no diffusion impurity. Consequently the semiconductor substrate on which the foregoing three thin film multiple layers are formed is inserted into the diffusion furnace. Further, the diffusion treatment is provided while continuing heating at a predetermined temperature and controlling the density of the diffusion impurity in the atmosphere within the diffusion furnace to supply the impurity equivalent substantially to the impurity amount diffused from the thin film B containing the diffusion impurity at a high density into the substrate to the thin film B. According to such a process, the diffusion layer with low sheet resistance can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3956482A JPS57184216A (en) | 1982-03-15 | 1982-03-15 | Forming impurity diffusion layer on surface of semiconductor element substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3956482A JPS57184216A (en) | 1982-03-15 | 1982-03-15 | Forming impurity diffusion layer on surface of semiconductor element substrate |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52053705A Division JPS6011803B2 (en) | 1977-05-12 | 1977-05-12 | Method of forming an impurity diffusion layer on the surface of a semiconductor element substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57184216A true JPS57184216A (en) | 1982-11-12 |
| JPS6160572B2 JPS6160572B2 (en) | 1986-12-22 |
Family
ID=12556572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3956482A Granted JPS57184216A (en) | 1982-03-15 | 1982-03-15 | Forming impurity diffusion layer on surface of semiconductor element substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57184216A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63193773A (en) * | 1987-02-06 | 1988-08-11 | Hitachi Ltd | Vtr unified camera equipped with reproducing function |
-
1982
- 1982-03-15 JP JP3956482A patent/JPS57184216A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6160572B2 (en) | 1986-12-22 |
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