JPS55158679A - Manufacture of solar cell - Google Patents
Manufacture of solar cellInfo
- Publication number
- JPS55158679A JPS55158679A JP6558579A JP6558579A JPS55158679A JP S55158679 A JPS55158679 A JP S55158679A JP 6558579 A JP6558579 A JP 6558579A JP 6558579 A JP6558579 A JP 6558579A JP S55158679 A JPS55158679 A JP S55158679A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- layer
- back surface
- solar cell
- resolved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 238000000034 method Methods 0.000 abstract 5
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000010410 layer Substances 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000003960 organic solvent Substances 0.000 abstract 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910019213 POCl3 Inorganic materials 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To simplify the process by applying SiO2 containing impurity elements on the back surface of a substrate to form a mask for a diffusion source and for gas diffusion of the surface layers, and diffusing the top and back surfaces in one process. CONSTITUTION:SiO2 powder with the weight concentration of 6% and B with the weight concentration of 30% are resolved in an organic solvent, and the solution is applied on the back surface by rotating the substrate. Then, the solvent is removed by heating, and a B added SiO2 film 4 is formed. Thereafter, P is gas-diffused from the surface with POCl3 by heating in N2, and an n-layer 1 is formed on the top surface and a p-layer 3 is formed on the back surface in one process. Finally, the SiO2 film 4 is removed. In this method, is formed a solar cell which is quite the same as a cell manufactured in complicated conventional processes. The surface concentration of a diffusion layer 3 can be freely controlled by varying the amount of impurities to be resolved in the organic solvent.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6558579A JPS55158679A (en) | 1979-05-29 | 1979-05-29 | Manufacture of solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6558579A JPS55158679A (en) | 1979-05-29 | 1979-05-29 | Manufacture of solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55158679A true JPS55158679A (en) | 1980-12-10 |
Family
ID=13291221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6558579A Pending JPS55158679A (en) | 1979-05-29 | 1979-05-29 | Manufacture of solar cell |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55158679A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002176759A (en) * | 2000-09-28 | 2002-06-21 | Nidec Copal Electronics Corp | Electromagnetic actuator |
JP2005223080A (en) * | 2004-02-04 | 2005-08-18 | Sharp Corp | Method of manufacturing solar cell |
JP2006288036A (en) * | 2005-03-31 | 2006-10-19 | Nidec Copal Corp | Electromagnetic actuator and blade drive device for camera |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49114889A (en) * | 1973-02-13 | 1974-11-01 |
-
1979
- 1979-05-29 JP JP6558579A patent/JPS55158679A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49114889A (en) * | 1973-02-13 | 1974-11-01 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002176759A (en) * | 2000-09-28 | 2002-06-21 | Nidec Copal Electronics Corp | Electromagnetic actuator |
JP2005223080A (en) * | 2004-02-04 | 2005-08-18 | Sharp Corp | Method of manufacturing solar cell |
JP4632672B2 (en) * | 2004-02-04 | 2011-02-16 | シャープ株式会社 | Manufacturing method of solar cell |
JP2006288036A (en) * | 2005-03-31 | 2006-10-19 | Nidec Copal Corp | Electromagnetic actuator and blade drive device for camera |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55158679A (en) | Manufacture of solar cell | |
JPS54104770A (en) | Heat treatment method for 3-5 group compound semiconductor | |
AU654785B2 (en) | Apparatus for forming diffusion junctions in solar cell substrates | |
JPS558011A (en) | Semi-conductor device manufacturing method | |
JPS5651830A (en) | Glassivating method for bevel-type semiconductor element | |
JPS55158680A (en) | Solar cell and manufacture thereof | |
JPS5538082A (en) | Formation for buried layer of semiconductor device | |
JPS5674924A (en) | Method of manufacturing semiconductor element | |
JPS5482992A (en) | Solar battery and its manufacture | |
JPS5534470A (en) | Production for solar battery | |
JPS5618417A (en) | Method for diffusing impurity into semiconductor substrate | |
JPS5627940A (en) | Manufacture of semiconductor elements | |
JPS57194524A (en) | Manufacture of semiconductor device | |
JPS5666030A (en) | Manufacture of semiconductor device | |
JPS5272162A (en) | Production of semiconductor device | |
JPS5728353A (en) | Manufacture of semiconductor device | |
JPS5279871A (en) | Production of impurity diffused layer | |
JPS6417425A (en) | Manufacture of semiconductor device | |
JPS5559738A (en) | Preparation of semiconductor device | |
JPS55165627A (en) | Method for diffusing impurity into semiconductor | |
JPS54101663A (en) | Aluminum diffusion method | |
JPS5673476A (en) | Manufacture of variable capacity diode | |
JPS54128268A (en) | Multi-diffusion method of impurity | |
JPS5583260A (en) | Semiconductor device and method of fabricating the same | |
JPS54130877A (en) | Production of semiconductor device |