JPS5618417A - Method for diffusing impurity into semiconductor substrate - Google Patents

Method for diffusing impurity into semiconductor substrate

Info

Publication number
JPS5618417A
JPS5618417A JP9366879A JP9366879A JPS5618417A JP S5618417 A JPS5618417 A JP S5618417A JP 9366879 A JP9366879 A JP 9366879A JP 9366879 A JP9366879 A JP 9366879A JP S5618417 A JPS5618417 A JP S5618417A
Authority
JP
Japan
Prior art keywords
type
semiconductor substrates
diffusing source
blending
diffusing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9366879A
Other languages
Japanese (ja)
Other versions
JPS617009B2 (en
Inventor
Haruyuki Goto
Tetsuro Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9366879A priority Critical patent/JPS5618417A/en
Publication of JPS5618417A publication Critical patent/JPS5618417A/en
Publication of JPS617009B2 publication Critical patent/JPS617009B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain a uniformly diffused layer by applying a slow drying type diffusing source containing N-type impurities on one main surface of each of a plurality of semiconductor substrates with a spinner, applying the slow drying type diffusing source containing P-type impurites on the other surface, contacting said semiconductor substrates, and performing heat treatment. CONSTITUTION:A mixture is prepared by blending n-butylcarbitol acetate and SiC powder as a seleasing agent into a solvent of ethyl cellulose. An N-type diffusing source is obtained by blending N-type impurities into said mixture and a P-type diffusing source is obtained by blending P-type impurities. Then, at first, the N-type diffusing source 11 is applied on one surface of each of a plurality of semiconductor substrates 1 with a spinner, then, P-type diffusing source 12 is applied on the other side. Thereafter, a plurality of the semiconductor substrates are contacted together so that the applied films of the same conductive type oppose each other, and the heat treatment is performed in a diffusing furnace. Finally, the substrates are immersed into concd. hydrofluoric acid, a glassy component is dissolved, and the semiconductor substrates are separated.
JP9366879A 1979-07-25 1979-07-25 Method for diffusing impurity into semiconductor substrate Granted JPS5618417A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9366879A JPS5618417A (en) 1979-07-25 1979-07-25 Method for diffusing impurity into semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9366879A JPS5618417A (en) 1979-07-25 1979-07-25 Method for diffusing impurity into semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS5618417A true JPS5618417A (en) 1981-02-21
JPS617009B2 JPS617009B2 (en) 1986-03-03

Family

ID=14088771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9366879A Granted JPS5618417A (en) 1979-07-25 1979-07-25 Method for diffusing impurity into semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5618417A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01112724A (en) * 1987-10-27 1989-05-01 Tokyo Ohka Kogyo Co Ltd Manufacture of dopant film
JP2013093563A (en) * 2011-10-04 2013-05-16 Shin Etsu Chem Co Ltd Coating agent for boron diffusion
JP6472936B1 (en) * 2018-02-02 2019-02-20 新電元工業株式会社 Semiconductor impurity liquid source, method for manufacturing semiconductor impurity liquid source, and method for manufacturing semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01112724A (en) * 1987-10-27 1989-05-01 Tokyo Ohka Kogyo Co Ltd Manufacture of dopant film
JP2013093563A (en) * 2011-10-04 2013-05-16 Shin Etsu Chem Co Ltd Coating agent for boron diffusion
JP6472936B1 (en) * 2018-02-02 2019-02-20 新電元工業株式会社 Semiconductor impurity liquid source, method for manufacturing semiconductor impurity liquid source, and method for manufacturing semiconductor device
WO2019150548A1 (en) * 2018-02-02 2019-08-08 新電元工業株式会社 Semiconductor impurity liquid source, method for manufacturing semiconductor impurity liquid source, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS617009B2 (en) 1986-03-03

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