JPS54100253A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54100253A JPS54100253A JP610878A JP610878A JPS54100253A JP S54100253 A JPS54100253 A JP S54100253A JP 610878 A JP610878 A JP 610878A JP 610878 A JP610878 A JP 610878A JP S54100253 A JPS54100253 A JP S54100253A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal
- ion
- poly
- injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To secure the manufacturing process of the semiconductor device which can form a shallow junction with reduced defect by giving the stack of the poly Si on the single crystal Si and then injecting the impurity ion with distribution to both the poly crystal and the single crystal.
CONSTITUTION: First, the SiO2 film is sticked through the heat oxidation or other methods onto the surface of P-type Si single crystal which is inclined within 7 from the (100) face, and then a window is drilled through the photoetching method to expose the Si single-crystal surface. After this, the poly-crystal Si layers are stacked by the pyrolysis. Wafer As or Sb of such structure is doped through the ion injection with such acceleration energy that 5W95% of the total injection amount may be concentrated near the surface of the Si single crystal. This means the injection of 3 × 1015 ion/cm2, and a heat treatment of under 2 hours is given to the test sample in N2 at 500°C. As a result, the defect caused in the single crystal by the As or Sb ion injection can be recovered, and thus the noncrystal layer is turned into the single crystal to form a shallow junction with reduced defect.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP610878A JPS54100253A (en) | 1978-01-25 | 1978-01-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP610878A JPS54100253A (en) | 1978-01-25 | 1978-01-25 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54100253A true JPS54100253A (en) | 1979-08-07 |
JPS6152972B2 JPS6152972B2 (en) | 1986-11-15 |
Family
ID=11629294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP610878A Granted JPS54100253A (en) | 1978-01-25 | 1978-01-25 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54100253A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6484719A (en) * | 1987-09-28 | 1989-03-30 | Matsushita Electronics Corp | Manufacture of semiconductor device |
US4863229A (en) * | 1982-02-17 | 1989-09-05 | Sharp Kabushiki Kaisha | Optical information transmitting device |
-
1978
- 1978-01-25 JP JP610878A patent/JPS54100253A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4863229A (en) * | 1982-02-17 | 1989-09-05 | Sharp Kabushiki Kaisha | Optical information transmitting device |
JPS6484719A (en) * | 1987-09-28 | 1989-03-30 | Matsushita Electronics Corp | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6152972B2 (en) | 1986-11-15 |
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