JPS54100253A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54100253A
JPS54100253A JP610878A JP610878A JPS54100253A JP S54100253 A JPS54100253 A JP S54100253A JP 610878 A JP610878 A JP 610878A JP 610878 A JP610878 A JP 610878A JP S54100253 A JPS54100253 A JP S54100253A
Authority
JP
Japan
Prior art keywords
single crystal
crystal
ion
poly
injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP610878A
Other languages
Japanese (ja)
Other versions
JPS6152972B2 (en
Inventor
Kazumichi Omura
Tomoyasu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP610878A priority Critical patent/JPS54100253A/en
Publication of JPS54100253A publication Critical patent/JPS54100253A/en
Publication of JPS6152972B2 publication Critical patent/JPS6152972B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To secure the manufacturing process of the semiconductor device which can form a shallow junction with reduced defect by giving the stack of the poly Si on the single crystal Si and then injecting the impurity ion with distribution to both the poly crystal and the single crystal.
CONSTITUTION: First, the SiO2 film is sticked through the heat oxidation or other methods onto the surface of P-type Si single crystal which is inclined within 7 from the (100) face, and then a window is drilled through the photoetching method to expose the Si single-crystal surface. After this, the poly-crystal Si layers are stacked by the pyrolysis. Wafer As or Sb of such structure is doped through the ion injection with such acceleration energy that 5W95% of the total injection amount may be concentrated near the surface of the Si single crystal. This means the injection of 3 × 1015 ion/cm2, and a heat treatment of under 2 hours is given to the test sample in N2 at 500°C. As a result, the defect caused in the single crystal by the As or Sb ion injection can be recovered, and thus the noncrystal layer is turned into the single crystal to form a shallow junction with reduced defect.
COPYRIGHT: (C)1979,JPO&Japio
JP610878A 1978-01-25 1978-01-25 Manufacture of semiconductor device Granted JPS54100253A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP610878A JPS54100253A (en) 1978-01-25 1978-01-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP610878A JPS54100253A (en) 1978-01-25 1978-01-25 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS54100253A true JPS54100253A (en) 1979-08-07
JPS6152972B2 JPS6152972B2 (en) 1986-11-15

Family

ID=11629294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP610878A Granted JPS54100253A (en) 1978-01-25 1978-01-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54100253A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6484719A (en) * 1987-09-28 1989-03-30 Matsushita Electronics Corp Manufacture of semiconductor device
US4863229A (en) * 1982-02-17 1989-09-05 Sharp Kabushiki Kaisha Optical information transmitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4863229A (en) * 1982-02-17 1989-09-05 Sharp Kabushiki Kaisha Optical information transmitting device
JPS6484719A (en) * 1987-09-28 1989-03-30 Matsushita Electronics Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6152972B2 (en) 1986-11-15

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