JPS6484719A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6484719A
JPS6484719A JP24338187A JP24338187A JPS6484719A JP S6484719 A JPS6484719 A JP S6484719A JP 24338187 A JP24338187 A JP 24338187A JP 24338187 A JP24338187 A JP 24338187A JP S6484719 A JPS6484719 A JP S6484719A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
silicon film
semiconductor substrate
heat treatment
type region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24338187A
Other languages
Japanese (ja)
Inventor
Yuji Yamanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP24338187A priority Critical patent/JPS6484719A/en
Publication of JPS6484719A publication Critical patent/JPS6484719A/en
Pending legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To make it possible to easily form a shallow P type region on a semiconductor substrate, by forming a polycrystalline silicon film on a semiconductor substrate surface, performing ion implantation or BF2<+> through the polycrystalline silicon film and performing a heat treatment. CONSTITUTION:A polycrystalline silicon film 1 is formed on the surface of a semiconductor substrate 2, ion implantation of BF2<+> is performed and then a heat treatment is performed. For example, first, the polycrystalline silicon film 1 is provided on the surface of the semiconductor substrate 2 in which a P type region is to be formed. Then, the ion implantation of BF2<+> is performed through the polycrystalline silicon film 1 under the condition of implantation energy of 50keV and implantation amount of 3X10<15>cm<-2>. In this stage, boron is comprised in the polycrystalline silicon film 1 with high concentration. Then, a heat treatment is performed on the semiconductor substrate in a nitrogen atmosphere at 900 deg.C for approximately 30 minutes and then a P type region 3 of approximately 0.1mum in depth is formed.
JP24338187A 1987-09-28 1987-09-28 Manufacture of semiconductor device Pending JPS6484719A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24338187A JPS6484719A (en) 1987-09-28 1987-09-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24338187A JPS6484719A (en) 1987-09-28 1987-09-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6484719A true JPS6484719A (en) 1989-03-30

Family

ID=17103008

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24338187A Pending JPS6484719A (en) 1987-09-28 1987-09-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6484719A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0700102A1 (en) * 1994-08-24 1996-03-06 Seiko Instruments Inc. Method for making opto-electronic conversion semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54100253A (en) * 1978-01-25 1979-08-07 Toshiba Corp Manufacture of semiconductor device
JPS55166958A (en) * 1979-06-15 1980-12-26 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS6269675A (en) * 1985-09-24 1987-03-30 Toshiba Corp Manufacture of semiconductor device
JPS62130522A (en) * 1985-12-02 1987-06-12 Toshiba Corp Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54100253A (en) * 1978-01-25 1979-08-07 Toshiba Corp Manufacture of semiconductor device
JPS55166958A (en) * 1979-06-15 1980-12-26 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS6269675A (en) * 1985-09-24 1987-03-30 Toshiba Corp Manufacture of semiconductor device
JPS62130522A (en) * 1985-12-02 1987-06-12 Toshiba Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0700102A1 (en) * 1994-08-24 1996-03-06 Seiko Instruments Inc. Method for making opto-electronic conversion semiconductor device

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