JPS6484719A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6484719A JPS6484719A JP24338187A JP24338187A JPS6484719A JP S6484719 A JPS6484719 A JP S6484719A JP 24338187 A JP24338187 A JP 24338187A JP 24338187 A JP24338187 A JP 24338187A JP S6484719 A JPS6484719 A JP S6484719A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- silicon film
- semiconductor substrate
- heat treatment
- type region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To make it possible to easily form a shallow P type region on a semiconductor substrate, by forming a polycrystalline silicon film on a semiconductor substrate surface, performing ion implantation or BF2<+> through the polycrystalline silicon film and performing a heat treatment. CONSTITUTION:A polycrystalline silicon film 1 is formed on the surface of a semiconductor substrate 2, ion implantation of BF2<+> is performed and then a heat treatment is performed. For example, first, the polycrystalline silicon film 1 is provided on the surface of the semiconductor substrate 2 in which a P type region is to be formed. Then, the ion implantation of BF2<+> is performed through the polycrystalline silicon film 1 under the condition of implantation energy of 50keV and implantation amount of 3X10<15>cm<-2>. In this stage, boron is comprised in the polycrystalline silicon film 1 with high concentration. Then, a heat treatment is performed on the semiconductor substrate in a nitrogen atmosphere at 900 deg.C for approximately 30 minutes and then a P type region 3 of approximately 0.1mum in depth is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24338187A JPS6484719A (en) | 1987-09-28 | 1987-09-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24338187A JPS6484719A (en) | 1987-09-28 | 1987-09-28 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6484719A true JPS6484719A (en) | 1989-03-30 |
Family
ID=17103008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24338187A Pending JPS6484719A (en) | 1987-09-28 | 1987-09-28 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6484719A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0700102A1 (en) * | 1994-08-24 | 1996-03-06 | Seiko Instruments Inc. | Method for making opto-electronic conversion semiconductor device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54100253A (en) * | 1978-01-25 | 1979-08-07 | Toshiba Corp | Manufacture of semiconductor device |
JPS55166958A (en) * | 1979-06-15 | 1980-12-26 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS6269675A (en) * | 1985-09-24 | 1987-03-30 | Toshiba Corp | Manufacture of semiconductor device |
JPS62130522A (en) * | 1985-12-02 | 1987-06-12 | Toshiba Corp | Manufacture of semiconductor device |
-
1987
- 1987-09-28 JP JP24338187A patent/JPS6484719A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54100253A (en) * | 1978-01-25 | 1979-08-07 | Toshiba Corp | Manufacture of semiconductor device |
JPS55166958A (en) * | 1979-06-15 | 1980-12-26 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS6269675A (en) * | 1985-09-24 | 1987-03-30 | Toshiba Corp | Manufacture of semiconductor device |
JPS62130522A (en) * | 1985-12-02 | 1987-06-12 | Toshiba Corp | Manufacture of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0700102A1 (en) * | 1994-08-24 | 1996-03-06 | Seiko Instruments Inc. | Method for making opto-electronic conversion semiconductor device |
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