JPS54118771A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54118771A
JPS54118771A JP2539278A JP2539278A JPS54118771A JP S54118771 A JPS54118771 A JP S54118771A JP 2539278 A JP2539278 A JP 2539278A JP 2539278 A JP2539278 A JP 2539278A JP S54118771 A JPS54118771 A JP S54118771A
Authority
JP
Japan
Prior art keywords
temperatures
gold
oxide film
electron beam
voltage drop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2539278A
Other languages
Japanese (ja)
Other versions
JPS6123649B2 (en
Inventor
Mitsuru Hirao
Toshikatsu Shirasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2539278A priority Critical patent/JPS54118771A/en
Publication of JPS54118771A publication Critical patent/JPS54118771A/en
Publication of JPS6123649B2 publication Critical patent/JPS6123649B2/ja
Granted legal-status Critical Current

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Abstract

PURPOSE: To reduce both the forward voltage drop and the life time of the minor carrier by introducing the fixed amount of gold to the semiconductor device and then irradiating the radiant rays at the temperatures of 300W450°C.
CONSTITUTION: An opening is drilled to the oxide film of p-type Si to form n-layer 3, and the unnecessary oxide film is removed with the gold deposited on substrate surface 11. Then about 30-minute heat treatment is given at about 800°C to carry out the gold diffusion. After this, Al electrode 4 is formed, and the temperatures of 300W450°C are kept to irradiate electron beam 5 finally. The electron beam energy is set to about 2MeV in consideration of the uniformity in the depth direction as well as the cost of facilities. Thus, the annealing can be omitted unlike the irradiation at the normal temperatures, and the sufficient forward voltage drop is obtained with the small leak current and the reduced reverse recovery time.
COPYRIGHT: (C)1979,JPO&Japio
JP2539278A 1978-03-08 1978-03-08 Manufacture of semiconductor device Granted JPS54118771A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2539278A JPS54118771A (en) 1978-03-08 1978-03-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2539278A JPS54118771A (en) 1978-03-08 1978-03-08 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS54118771A true JPS54118771A (en) 1979-09-14
JPS6123649B2 JPS6123649B2 (en) 1986-06-06

Family

ID=12164604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2539278A Granted JPS54118771A (en) 1978-03-08 1978-03-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54118771A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56141444U (en) * 1980-03-24 1981-10-26

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52141583A (en) * 1976-05-03 1977-11-25 Gen Electric Method of producing semiconductor device
JPS53145583A (en) * 1977-05-25 1978-12-18 Nec Corp Semiconductor device and production of the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52141583A (en) * 1976-05-03 1977-11-25 Gen Electric Method of producing semiconductor device
JPS53145583A (en) * 1977-05-25 1978-12-18 Nec Corp Semiconductor device and production of the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56141444U (en) * 1980-03-24 1981-10-26

Also Published As

Publication number Publication date
JPS6123649B2 (en) 1986-06-06

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