JPS5661179A - Preparation of semiconductor radiation detector - Google Patents
Preparation of semiconductor radiation detectorInfo
- Publication number
- JPS5661179A JPS5661179A JP13741179A JP13741179A JPS5661179A JP S5661179 A JPS5661179 A JP S5661179A JP 13741179 A JP13741179 A JP 13741179A JP 13741179 A JP13741179 A JP 13741179A JP S5661179 A JPS5661179 A JP S5661179A
- Authority
- JP
- Japan
- Prior art keywords
- region
- phosphorus
- junction
- radiation detector
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000005855 radiation Effects 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 3
- 239000010410 layer Substances 0.000 abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 239000010979 ruby Substances 0.000 abstract 1
- 229910001750 ruby Inorganic materials 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 230000004304 visual acuity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
- H01L31/1185—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors of the shallow PN junction detector type
Abstract
PURPOSE:To obtain a semiconductor radiation detector having a higher efficiency by employing the ion implantation to provide an impurity layer to form a P-N junction or ohmic contact in a semiconductor layer having ultrahigh resistivity and high purity, and locally annealing the impurity layer by the laser or electron beam irradiation. CONSTITUTION:In the limited region of a P type Si substrate 11 having ultrahigh resistivity, N type impurity ions 13 of phosphorus or the like are implanted with a dosage of the order of 1-10X10<5>/cm<2> by using a mask 12 of a stainless steel or aluminium plate to form an ion implanted region 14 in the surface layer of the substrate 11. Then, by using the same mask 12, a ruby laser beam 15 is uniformly applied to the region 14 on scanning to heat only the region 14 to a high temperature so that the phosphorus is rearranged to the lattice position as well as the crystal defect produced in the ion implantation is corrected to obtain an excellent P-N junction. Preventing the change of lifetime and rsistivity, this permits a detector having a higher detection efficiency and energy resolving-power to be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13741179A JPS5661179A (en) | 1979-10-24 | 1979-10-24 | Preparation of semiconductor radiation detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13741179A JPS5661179A (en) | 1979-10-24 | 1979-10-24 | Preparation of semiconductor radiation detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5661179A true JPS5661179A (en) | 1981-05-26 |
Family
ID=15198002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13741179A Pending JPS5661179A (en) | 1979-10-24 | 1979-10-24 | Preparation of semiconductor radiation detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5661179A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6070774A (en) * | 1983-09-27 | 1985-04-22 | Yokogawa Hokushin Electric Corp | Detector for radiation |
| JPS60233865A (en) * | 1984-05-02 | 1985-11-20 | Tetsuo Nakamura | Radiation detector |
| JP2006351659A (en) * | 2005-06-14 | 2006-12-28 | Toyota Motor Corp | Method of manufacturing semiconductor device |
-
1979
- 1979-10-24 JP JP13741179A patent/JPS5661179A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6070774A (en) * | 1983-09-27 | 1985-04-22 | Yokogawa Hokushin Electric Corp | Detector for radiation |
| JPS60233865A (en) * | 1984-05-02 | 1985-11-20 | Tetsuo Nakamura | Radiation detector |
| JP2006351659A (en) * | 2005-06-14 | 2006-12-28 | Toyota Motor Corp | Method of manufacturing semiconductor device |
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