JPS5624954A - Formation of buried layer - Google Patents
Formation of buried layerInfo
- Publication number
- JPS5624954A JPS5624954A JP10027379A JP10027379A JPS5624954A JP S5624954 A JPS5624954 A JP S5624954A JP 10027379 A JP10027379 A JP 10027379A JP 10027379 A JP10027379 A JP 10027379A JP S5624954 A JPS5624954 A JP S5624954A
- Authority
- JP
- Japan
- Prior art keywords
- buried layer
- semiconductor substrate
- laser light
- electron beam
- high density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain a high density buried layer having less defects by implanting ions to predetermined portion on a semiconductor substrate surface and then irradiating a laser light or electron beam thereto to calcine it. CONSTITUTION:P, B, As or Sb is implanted in a large quantity onto desired portion of the semiconductor substrate, the laser light or electron beam is then irradiated thereto. Then, the region implanted with ion in high density is selectively heated and annealed by the absorption of energy by free electrons. Thus, the defects produced owing to ion implantation are removed to form a preferable epitaxial layer thereon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10027379A JPS5624954A (en) | 1979-08-08 | 1979-08-08 | Formation of buried layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10027379A JPS5624954A (en) | 1979-08-08 | 1979-08-08 | Formation of buried layer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5624954A true JPS5624954A (en) | 1981-03-10 |
Family
ID=14269590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10027379A Pending JPS5624954A (en) | 1979-08-08 | 1979-08-08 | Formation of buried layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5624954A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57106046A (en) * | 1980-12-23 | 1982-07-01 | Toshiba Corp | Manufacture of semiconductor device |
JPS57143823A (en) * | 1981-02-28 | 1982-09-06 | Nippon Telegr & Teleph Corp <Ntt> | Fabrication of semiconductor device |
EP0491313A2 (en) * | 1990-12-17 | 1992-06-24 | Applied Materials, Inc. | Ion implantation method and apparatus |
JP2002025931A (en) * | 2000-06-28 | 2002-01-25 | Hynix Semiconductor Inc | Manufacture of semiconductor element |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5114870A (en) * | 1974-07-29 | 1976-02-05 | Tokumitsu Morita | Kinzokukanerubono seizohoho |
-
1979
- 1979-08-08 JP JP10027379A patent/JPS5624954A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5114870A (en) * | 1974-07-29 | 1976-02-05 | Tokumitsu Morita | Kinzokukanerubono seizohoho |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57106046A (en) * | 1980-12-23 | 1982-07-01 | Toshiba Corp | Manufacture of semiconductor device |
JPS57143823A (en) * | 1981-02-28 | 1982-09-06 | Nippon Telegr & Teleph Corp <Ntt> | Fabrication of semiconductor device |
EP0491313A2 (en) * | 1990-12-17 | 1992-06-24 | Applied Materials, Inc. | Ion implantation method and apparatus |
JP2002025931A (en) * | 2000-06-28 | 2002-01-25 | Hynix Semiconductor Inc | Manufacture of semiconductor element |
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