JPS5624954A - Formation of buried layer - Google Patents

Formation of buried layer

Info

Publication number
JPS5624954A
JPS5624954A JP10027379A JP10027379A JPS5624954A JP S5624954 A JPS5624954 A JP S5624954A JP 10027379 A JP10027379 A JP 10027379A JP 10027379 A JP10027379 A JP 10027379A JP S5624954 A JPS5624954 A JP S5624954A
Authority
JP
Japan
Prior art keywords
buried layer
semiconductor substrate
laser light
electron beam
high density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10027379A
Other languages
Japanese (ja)
Inventor
Masahiko Kogirima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10027379A priority Critical patent/JPS5624954A/en
Publication of JPS5624954A publication Critical patent/JPS5624954A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a high density buried layer having less defects by implanting ions to predetermined portion on a semiconductor substrate surface and then irradiating a laser light or electron beam thereto to calcine it. CONSTITUTION:P, B, As or Sb is implanted in a large quantity onto desired portion of the semiconductor substrate, the laser light or electron beam is then irradiated thereto. Then, the region implanted with ion in high density is selectively heated and annealed by the absorption of energy by free electrons. Thus, the defects produced owing to ion implantation are removed to form a preferable epitaxial layer thereon.
JP10027379A 1979-08-08 1979-08-08 Formation of buried layer Pending JPS5624954A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10027379A JPS5624954A (en) 1979-08-08 1979-08-08 Formation of buried layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10027379A JPS5624954A (en) 1979-08-08 1979-08-08 Formation of buried layer

Publications (1)

Publication Number Publication Date
JPS5624954A true JPS5624954A (en) 1981-03-10

Family

ID=14269590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10027379A Pending JPS5624954A (en) 1979-08-08 1979-08-08 Formation of buried layer

Country Status (1)

Country Link
JP (1) JPS5624954A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106046A (en) * 1980-12-23 1982-07-01 Toshiba Corp Manufacture of semiconductor device
JPS57143823A (en) * 1981-02-28 1982-09-06 Nippon Telegr & Teleph Corp <Ntt> Fabrication of semiconductor device
EP0491313A2 (en) * 1990-12-17 1992-06-24 Applied Materials, Inc. Ion implantation method and apparatus
JP2002025931A (en) * 2000-06-28 2002-01-25 Hynix Semiconductor Inc Manufacture of semiconductor element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5114870A (en) * 1974-07-29 1976-02-05 Tokumitsu Morita Kinzokukanerubono seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5114870A (en) * 1974-07-29 1976-02-05 Tokumitsu Morita Kinzokukanerubono seizohoho

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106046A (en) * 1980-12-23 1982-07-01 Toshiba Corp Manufacture of semiconductor device
JPS57143823A (en) * 1981-02-28 1982-09-06 Nippon Telegr & Teleph Corp <Ntt> Fabrication of semiconductor device
EP0491313A2 (en) * 1990-12-17 1992-06-24 Applied Materials, Inc. Ion implantation method and apparatus
JP2002025931A (en) * 2000-06-28 2002-01-25 Hynix Semiconductor Inc Manufacture of semiconductor element

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