JPS55132037A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55132037A JPS55132037A JP3950979A JP3950979A JPS55132037A JP S55132037 A JPS55132037 A JP S55132037A JP 3950979 A JP3950979 A JP 3950979A JP 3950979 A JP3950979 A JP 3950979A JP S55132037 A JPS55132037 A JP S55132037A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- laser beam
- wafer
- implanted
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Abstract
PURPOSE:To decrease manufacturing cost by a method wherein an impurity ion is implanted in a semiconductor layer in the same means, and then pn-junction is formed through heat treatment by means of laser beam. CONSTITUTION:A semiconductor device manufacturing device is obtained through combining and coupling a semiconductor wafer container 1 for ion implantation, an ion generating source 2 and a laser beam generator 3. Under constituting such manufacturing means, an ion is generated from the ion generating source 2, the impurity ion is implanted on a wafer arranged in the wafer container 1, and a laser beam from the laser beam generator 3 is irradiated to an ion-implanted region to produce pn-junction through heat treatment. It is then not necessary to transfer the wafer, leading to cost lowering; it is also not necessary to heat annecessary portion of the wafer, thus minimizing an occurrence of a crystal defect due to heat shock.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3950979A JPS55132037A (en) | 1979-04-02 | 1979-04-02 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3950979A JPS55132037A (en) | 1979-04-02 | 1979-04-02 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55132037A true JPS55132037A (en) | 1980-10-14 |
Family
ID=12555001
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3950979A Pending JPS55132037A (en) | 1979-04-02 | 1979-04-02 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55132037A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007073534A (en) * | 1996-05-15 | 2007-03-22 | Semiconductor Energy Lab Co Ltd | Doping processor |
US8003958B2 (en) | 1996-05-15 | 2011-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for doping |
-
1979
- 1979-04-02 JP JP3950979A patent/JPS55132037A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007073534A (en) * | 1996-05-15 | 2007-03-22 | Semiconductor Energy Lab Co Ltd | Doping processor |
US8003958B2 (en) | 1996-05-15 | 2011-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for doping |
US8344336B2 (en) | 1996-05-15 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for doping |
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