JPS5352355A - Impurity gettering method - Google Patents

Impurity gettering method

Info

Publication number
JPS5352355A
JPS5352355A JP12722976A JP12722976A JPS5352355A JP S5352355 A JPS5352355 A JP S5352355A JP 12722976 A JP12722976 A JP 12722976A JP 12722976 A JP12722976 A JP 12722976A JP S5352355 A JPS5352355 A JP S5352355A
Authority
JP
Japan
Prior art keywords
gettering method
impurity gettering
realized
laser beam
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12722976A
Other languages
Japanese (ja)
Inventor
Nobuo Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12722976A priority Critical patent/JPS5352355A/en
Publication of JPS5352355A publication Critical patent/JPS5352355A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: Local gettering of satisfactory controllability is realized and the electrical characteristics of semiconductor elements are improved by utilizing laser beam radiation in forming impurity capturing crystal defect layers in a semiconductor wafer.
COPYRIGHT: (C)1978,JPO&Japio
JP12722976A 1976-10-25 1976-10-25 Impurity gettering method Pending JPS5352355A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12722976A JPS5352355A (en) 1976-10-25 1976-10-25 Impurity gettering method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12722976A JPS5352355A (en) 1976-10-25 1976-10-25 Impurity gettering method

Publications (1)

Publication Number Publication Date
JPS5352355A true JPS5352355A (en) 1978-05-12

Family

ID=14954916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12722976A Pending JPS5352355A (en) 1976-10-25 1976-10-25 Impurity gettering method

Country Status (1)

Country Link
JP (1) JPS5352355A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793532A (en) * 1980-12-03 1982-06-10 Toshiba Corp Treating method for semiconductor wafer
JPS63226030A (en) * 1986-09-30 1988-09-20 Kyushu Denshi Kinzoku Kk Manufacture of semiconductor substrate
JPS6427231A (en) * 1986-06-30 1989-01-30 Nec Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793532A (en) * 1980-12-03 1982-06-10 Toshiba Corp Treating method for semiconductor wafer
JPS6427231A (en) * 1986-06-30 1989-01-30 Nec Corp Manufacture of semiconductor device
JPS63226030A (en) * 1986-09-30 1988-09-20 Kyushu Denshi Kinzoku Kk Manufacture of semiconductor substrate

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