JPS51115777A - Manufacturing method of a semiconductor apparatus - Google Patents

Manufacturing method of a semiconductor apparatus

Info

Publication number
JPS51115777A
JPS51115777A JP3547475A JP3547475A JPS51115777A JP S51115777 A JPS51115777 A JP S51115777A JP 3547475 A JP3547475 A JP 3547475A JP 3547475 A JP3547475 A JP 3547475A JP S51115777 A JPS51115777 A JP S51115777A
Authority
JP
Japan
Prior art keywords
semiconductor apparatus
manufacturing
cracking
wafer
low cost
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3547475A
Other languages
Japanese (ja)
Other versions
JPS5851413B2 (en
Inventor
Tomoyuki Tanaka
Masahiro Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3547475A priority Critical patent/JPS5851413B2/en
Publication of JPS51115777A publication Critical patent/JPS51115777A/en
Publication of JPS5851413B2 publication Critical patent/JPS5851413B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: High withstand voltage semiconductor apparatus, without cracking of a wafer, with good available percentage and with low cost.
COPYRIGHT: (C)1976,JPO&Japio
JP3547475A 1975-03-26 1975-03-26 Handout Taisouchino Seizouhouhou Expired JPS5851413B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3547475A JPS5851413B2 (en) 1975-03-26 1975-03-26 Handout Taisouchino Seizouhouhou

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3547475A JPS5851413B2 (en) 1975-03-26 1975-03-26 Handout Taisouchino Seizouhouhou

Publications (2)

Publication Number Publication Date
JPS51115777A true JPS51115777A (en) 1976-10-12
JPS5851413B2 JPS5851413B2 (en) 1983-11-16

Family

ID=12442761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3547475A Expired JPS5851413B2 (en) 1975-03-26 1975-03-26 Handout Taisouchino Seizouhouhou

Country Status (1)

Country Link
JP (1) JPS5851413B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742146A (en) * 1980-08-27 1982-03-09 Nec Corp Manufacture of semiconductor device
JP2013161888A (en) * 2012-02-02 2013-08-19 Shindengen Electric Mfg Co Ltd Mesa type semiconductor element manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742146A (en) * 1980-08-27 1982-03-09 Nec Corp Manufacture of semiconductor device
JP2013161888A (en) * 2012-02-02 2013-08-19 Shindengen Electric Mfg Co Ltd Mesa type semiconductor element manufacturing method

Also Published As

Publication number Publication date
JPS5851413B2 (en) 1983-11-16

Similar Documents

Publication Publication Date Title
JPS5224478A (en) Semiconductor device manufacturing process
JPS51134884A (en) Manufacturing method of electric cable
JPS51115775A (en) Semiconductor apparatus
JPS51115777A (en) Manufacturing method of a semiconductor apparatus
JPS51126083A (en) Manufacturing method of semi-conductor equpment
JPS51138388A (en) High voltage withstand semiconductor device
JPS5248978A (en) Process for production of semiconductor device
JPS5249781A (en) Process for production of semiconductor device
JPS51134885A (en) Manufacturing method of electric cable
JPS51137382A (en) Measuring method for junction point within semi conductor wafer
JPS5211765A (en) Method of manufacturing semiconductor device
JPS5227368A (en) Selection etching method
JPS5245274A (en) Method for inspection before perfection of transistor
JPS5240078A (en) Process for production of semiconductor device
JPS51134587A (en) Production method of semiconductor integrated-circuit device
JPS522385A (en) Semiconductor device manufacturing method
JPS51113469A (en) Manufacturing method of semiconductor device
JPS5211867A (en) Manufacturing method of a semiconductor device
JPS51140638A (en) Positioning method
JPS51112266A (en) Semiconductor device production method
JPS51151089A (en) Manufacturing method of a semiconductor
JPS51132762A (en) Heat-treatment method of semiconductor device
JPS51151071A (en) Manufacturing method of a semiconductor apparatus
JPS5351978A (en) Manufacture of semiconductor device
JPS5264277A (en) Treatment after etching of soldered semiconductor