JPS57111020A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57111020A
JPS57111020A JP18226581A JP18226581A JPS57111020A JP S57111020 A JPS57111020 A JP S57111020A JP 18226581 A JP18226581 A JP 18226581A JP 18226581 A JP18226581 A JP 18226581A JP S57111020 A JPS57111020 A JP S57111020A
Authority
JP
Japan
Prior art keywords
laser
substrate
irradiated
beams
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18226581A
Other languages
Japanese (ja)
Inventor
Shizunori Ooyu
Masanobu Miyao
Mitsumasa Koyanagi
Tetsukazu Hashimoto
Takashi Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP18226581A priority Critical patent/JPS57111020A/en
Publication of JPS57111020A publication Critical patent/JPS57111020A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Abstract

PURPOSE:To recover the damage of a crystal generated in an ion implantation layer efficiently through the irradiation of laser beams by utilizing a layer or a region having the high absorpition coefficient of the laser beams. CONSTITUTION:Free electrons (or holes) are formed previously in a Si substrate, and a CO2 laser is irradiated. ultraviolet rays using a Xe lamp as a light source are irradiated onto the Si substrate 10, and the CO2 laser is irradiated. The temperature of the Si substrate 10 is elevated by means of a heater 11, and the CO2 laser is irradiated. Or the surface of the Si substrate 10 into which ions are implanted is coated with the film 12 having the large absorption coefficient of beams such as SiO2 or a phosphorus glass film, and the CO2 laser is irradiated. Accordingly, the free electrons (or holes) increase in the substrate, the absorption coefficient of the laser beams is improved, and the efficiency of annealing is ameliorated.
JP18226581A 1981-11-16 1981-11-16 Manufacture of semiconductor device Pending JPS57111020A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18226581A JPS57111020A (en) 1981-11-16 1981-11-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18226581A JPS57111020A (en) 1981-11-16 1981-11-16 Manufacture of semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP10621378A Division JPS5534416A (en) 1978-09-01 1978-09-01 Method of manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS57111020A true JPS57111020A (en) 1982-07-10

Family

ID=16115228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18226581A Pending JPS57111020A (en) 1981-11-16 1981-11-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57111020A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007507897A (en) * 2003-09-29 2007-03-29 ウルトラテック インク Laser thermal annealing of lightly doped silicon substrates
JP2010503202A (en) * 2006-08-31 2010-01-28 アプライド マテリアルズ インコーポレイテッド Dynamic surface annealing method of implanted dopants by low temperature HDPCVD process for depositing light absorbing layer with high extinction coefficient
JP2010109375A (en) * 2004-01-22 2010-05-13 Ultratech Inc Laser thermal annealing of lightly doped silicon substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926456A (en) * 1972-07-11 1974-03-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926456A (en) * 1972-07-11 1974-03-08

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007507897A (en) * 2003-09-29 2007-03-29 ウルトラテック インク Laser thermal annealing of lightly doped silicon substrates
JP2012231158A (en) * 2003-09-29 2012-11-22 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates
JP2010109375A (en) * 2004-01-22 2010-05-13 Ultratech Inc Laser thermal annealing of lightly doped silicon substrate
JP2010503202A (en) * 2006-08-31 2010-01-28 アプライド マテリアルズ インコーポレイテッド Dynamic surface annealing method of implanted dopants by low temperature HDPCVD process for depositing light absorbing layer with high extinction coefficient

Similar Documents

Publication Publication Date Title
JPS57210635A (en) Manufacture of semiconductor device
JPS5548926A (en) Preparation of semiconductor device
EP0207528A3 (en) Photomask and production process
JPS57111020A (en) Manufacture of semiconductor device
JP2832340B2 (en) Method for producing light-induced refractive index changing glass material, light-induced refractive index changing glass material, and method for changing refractive index of glass material
JPS5534416A (en) Method of manufacturing semiconductor device
JPS6476737A (en) Manufacture of semiconductor integrated circuit device
JPS57104218A (en) Fabrication of semiconductor device
JPS6226571B2 (en)
JPS5624954A (en) Formation of buried layer
JPS57130435A (en) Annealing method of matter by light beam
JPH05206053A (en) Crystal damage remover
JPS5897837A (en) Light irradiation annealing method and device therefor
JPS57113233A (en) Manufacture of semiconductor device
JPS5730337A (en) Formation of surface protecting film for semiconductor
JPS57102008A (en) Control of warp of semiconductor wafer
JPS57112013A (en) Manufacture of semiconductor device
JPS55113336A (en) Light-annealing
JPS57133626A (en) Manufacture of semiconductor thin film
JPS6341212B2 (en)
JPS56130917A (en) Manufacture of semiconductor device
JPS55132037A (en) Manufacture of semiconductor device
JPS57138157A (en) Manufacture of semiconductor device
JPS5486265A (en) Manufacture of semiconductor device
JPS57198618A (en) Manufacture of semiconductor device having multiple crystalline layer