JPS5486265A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5486265A
JPS5486265A JP15482677A JP15482677A JPS5486265A JP S5486265 A JPS5486265 A JP S5486265A JP 15482677 A JP15482677 A JP 15482677A JP 15482677 A JP15482677 A JP 15482677A JP S5486265 A JPS5486265 A JP S5486265A
Authority
JP
Japan
Prior art keywords
glass
laser beam
scribing
passivation
radiant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15482677A
Other languages
Japanese (ja)
Inventor
Junichi Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15482677A priority Critical patent/JPS5486265A/en
Publication of JPS5486265A publication Critical patent/JPS5486265A/en
Pending legal-status Critical Current

Links

Landscapes

  • Dicing (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To obtain pellets by effective laser scribing by controlling the laser beam absorptivity of passivation glass through radiant-ray irradiation.
CONSTITUTION: Passivation glass 3 sticking to mesa type thyristor 2 is irradiated with radiant rays such as electron beams and gamma rays to be changed in color and then the colored glass part is irradiated with laser beam 5 for scribing. Since the colored glass becomes high in laser beam absorptivity, braking after laser scribing is simplified and no cracking occurs to the glass. Next, pelletized pellets are heat- treated to recover characteristics as the passivation film of the glass deteriorated by radiant rays.
COPYRIGHT: (C)1979,JPO&Japio
JP15482677A 1977-12-21 1977-12-21 Manufacture of semiconductor device Pending JPS5486265A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15482677A JPS5486265A (en) 1977-12-21 1977-12-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15482677A JPS5486265A (en) 1977-12-21 1977-12-21 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5486265A true JPS5486265A (en) 1979-07-09

Family

ID=15592715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15482677A Pending JPS5486265A (en) 1977-12-21 1977-12-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5486265A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103477453A (en) * 2011-04-14 2013-12-25 欧司朗光电半导体有限公司 Method for producing a semiconductor body
JP2014187143A (en) * 2013-03-22 2014-10-02 Shindengen Electric Mfg Co Ltd Substrate for forming semiconductor device, method for manufacturing the same, mesa type semiconductor device and method for manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103477453A (en) * 2011-04-14 2013-12-25 欧司朗光电半导体有限公司 Method for producing a semiconductor body
JP2014511042A (en) * 2011-04-14 2014-05-01 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Manufacturing method of semiconductor body
US9324615B2 (en) 2011-04-14 2016-04-26 Osram Opto Semiconductors Gmbh Method for producing a semiconductor body
US9768344B2 (en) 2011-04-14 2017-09-19 Osram Opto Semiconductors Gmbh Method of producing a semiconductor body
EP2697835B1 (en) * 2011-04-14 2019-09-04 OSRAM Opto Semiconductors GmbH Method for producing a semiconductor body
JP2014187143A (en) * 2013-03-22 2014-10-02 Shindengen Electric Mfg Co Ltd Substrate for forming semiconductor device, method for manufacturing the same, mesa type semiconductor device and method for manufacturing the same

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