JPS57105741A - Image formation - Google Patents
Image formationInfo
- Publication number
- JPS57105741A JPS57105741A JP18353480A JP18353480A JPS57105741A JP S57105741 A JPS57105741 A JP S57105741A JP 18353480 A JP18353480 A JP 18353480A JP 18353480 A JP18353480 A JP 18353480A JP S57105741 A JPS57105741 A JP S57105741A
- Authority
- JP
- Japan
- Prior art keywords
- region
- photomask
- defect
- high energy
- energy beams
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
Abstract
PURPOSE:To easily correct a defect and to obtain a perfect photomask pattern, by forming a film becoming black upon irradiation of high energy beams, on a region including a deficiency type defect of a photomask pattern, and then irradiating the region with the high energy beams. CONSTITUTION:To correct a photomask obtained by forming a pattern of a metal film 2 on a glass substrate 1 containing a deficiency type defect 3, a mixture 4 of a binder, such as polyvinylalcohol, containing a spiropyran or fluoran derivative leuco dye and a phenolic compound, such as bisphenol A, or a stearic acid or the like, and an orgaic acid heavy metal salt, such as Ni, Co, or Cu salt and an organic reducing agent, or the like is coated on all the surface of the substrate 1. The region of the defect 3 is irradiated with high energy beams 5 to form a region 6 with the mixture blackened. A nonblackened layer 4 may be removed, but even if it is left as it is, the photomask, is used without any trouble for manufacture of semiconductor devices.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18353480A JPS57105741A (en) | 1980-12-24 | 1980-12-24 | Image formation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18353480A JPS57105741A (en) | 1980-12-24 | 1980-12-24 | Image formation |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57105741A true JPS57105741A (en) | 1982-07-01 |
Family
ID=16137506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18353480A Pending JPS57105741A (en) | 1980-12-24 | 1980-12-24 | Image formation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57105741A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0165686A2 (en) * | 1984-06-20 | 1985-12-27 | Gould Inc. | Method for repairing a photomask by laser-induced polymer degradation |
JPS6114640A (en) * | 1984-06-20 | 1986-01-22 | グールド・インコーポレイテツド | Method and apparatus for correcting defect of photo mask |
JPS63228158A (en) * | 1987-03-17 | 1988-09-22 | Fujitsu Ltd | Method for correcting mask defect |
-
1980
- 1980-12-24 JP JP18353480A patent/JPS57105741A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0165686A2 (en) * | 1984-06-20 | 1985-12-27 | Gould Inc. | Method for repairing a photomask by laser-induced polymer degradation |
JPS6114640A (en) * | 1984-06-20 | 1986-01-22 | グールド・インコーポレイテツド | Method and apparatus for correcting defect of photo mask |
JPS63228158A (en) * | 1987-03-17 | 1988-09-22 | Fujitsu Ltd | Method for correcting mask defect |
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