JPS57105741A - Image formation - Google Patents

Image formation

Info

Publication number
JPS57105741A
JPS57105741A JP18353480A JP18353480A JPS57105741A JP S57105741 A JPS57105741 A JP S57105741A JP 18353480 A JP18353480 A JP 18353480A JP 18353480 A JP18353480 A JP 18353480A JP S57105741 A JPS57105741 A JP S57105741A
Authority
JP
Japan
Prior art keywords
region
photomask
defect
high energy
energy beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18353480A
Other languages
Japanese (ja)
Inventor
Toshio Oguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP18353480A priority Critical patent/JPS57105741A/en
Publication of JPS57105741A publication Critical patent/JPS57105741A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72Repair or correction of mask defects

Abstract

PURPOSE:To easily correct a defect and to obtain a perfect photomask pattern, by forming a film becoming black upon irradiation of high energy beams, on a region including a deficiency type defect of a photomask pattern, and then irradiating the region with the high energy beams. CONSTITUTION:To correct a photomask obtained by forming a pattern of a metal film 2 on a glass substrate 1 containing a deficiency type defect 3, a mixture 4 of a binder, such as polyvinylalcohol, containing a spiropyran or fluoran derivative leuco dye and a phenolic compound, such as bisphenol A, or a stearic acid or the like, and an orgaic acid heavy metal salt, such as Ni, Co, or Cu salt and an organic reducing agent, or the like is coated on all the surface of the substrate 1. The region of the defect 3 is irradiated with high energy beams 5 to form a region 6 with the mixture blackened. A nonblackened layer 4 may be removed, but even if it is left as it is, the photomask, is used without any trouble for manufacture of semiconductor devices.
JP18353480A 1980-12-24 1980-12-24 Image formation Pending JPS57105741A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18353480A JPS57105741A (en) 1980-12-24 1980-12-24 Image formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18353480A JPS57105741A (en) 1980-12-24 1980-12-24 Image formation

Publications (1)

Publication Number Publication Date
JPS57105741A true JPS57105741A (en) 1982-07-01

Family

ID=16137506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18353480A Pending JPS57105741A (en) 1980-12-24 1980-12-24 Image formation

Country Status (1)

Country Link
JP (1) JPS57105741A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0165686A2 (en) * 1984-06-20 1985-12-27 Gould Inc. Method for repairing a photomask by laser-induced polymer degradation
JPS6114640A (en) * 1984-06-20 1986-01-22 グールド・インコーポレイテツド Method and apparatus for correcting defect of photo mask
JPS63228158A (en) * 1987-03-17 1988-09-22 Fujitsu Ltd Method for correcting mask defect

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0165686A2 (en) * 1984-06-20 1985-12-27 Gould Inc. Method for repairing a photomask by laser-induced polymer degradation
JPS6114640A (en) * 1984-06-20 1986-01-22 グールド・インコーポレイテツド Method and apparatus for correcting defect of photo mask
JPS63228158A (en) * 1987-03-17 1988-09-22 Fujitsu Ltd Method for correcting mask defect

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