JPS57210629A - Correcting method for photo-mask pattern - Google Patents

Correcting method for photo-mask pattern

Info

Publication number
JPS57210629A
JPS57210629A JP9394981A JP9394981A JPS57210629A JP S57210629 A JPS57210629 A JP S57210629A JP 9394981 A JP9394981 A JP 9394981A JP 9394981 A JP9394981 A JP 9394981A JP S57210629 A JPS57210629 A JP S57210629A
Authority
JP
Japan
Prior art keywords
pin hole
window
resist film
film
laser beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9394981A
Other languages
Japanese (ja)
Other versions
JPS6332380B2 (en
Inventor
Akira Morishige
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9394981A priority Critical patent/JPS57210629A/en
Publication of JPS57210629A publication Critical patent/JPS57210629A/en
Publication of JPS6332380B2 publication Critical patent/JPS6332380B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To correct a pin hole in a short time by boring the window of a resist film by laser beams. CONSTITUTION:The pin hole A and a residue B are formed to the metallic pattern 2 on a substrate 1, and a master is coated with the resist film 3 and the window of the resist film of the pin hole section is bored through the irradiation of the laser beams in order to correct the formation of the pin hole and the residue. A metallic film 4 is attached onto the whole surface containing the pin hole section, and the metallic film 4 is exfoliated together with the resist 3 through a lift-off method. Accordingly, only the resist film can be burnt without burning out the metallic film pattern because the window is bored by the laser beams.
JP9394981A 1981-06-19 1981-06-19 Correcting method for photo-mask pattern Granted JPS57210629A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9394981A JPS57210629A (en) 1981-06-19 1981-06-19 Correcting method for photo-mask pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9394981A JPS57210629A (en) 1981-06-19 1981-06-19 Correcting method for photo-mask pattern

Publications (2)

Publication Number Publication Date
JPS57210629A true JPS57210629A (en) 1982-12-24
JPS6332380B2 JPS6332380B2 (en) 1988-06-29

Family

ID=14096682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9394981A Granted JPS57210629A (en) 1981-06-19 1981-06-19 Correcting method for photo-mask pattern

Country Status (1)

Country Link
JP (1) JPS57210629A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63210845A (en) * 1987-02-27 1988-09-01 Hitachi Ltd Method for correcting faulty part
JPH039354A (en) * 1989-06-06 1991-01-17 Dainippon Printing Co Ltd Method for correcting defect of emulsion mask or the like

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5693323A (en) * 1979-12-26 1981-07-28 Nec Corp Correcting method for photomask using laser beam and device thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5693323A (en) * 1979-12-26 1981-07-28 Nec Corp Correcting method for photomask using laser beam and device thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63210845A (en) * 1987-02-27 1988-09-01 Hitachi Ltd Method for correcting faulty part
JPH039354A (en) * 1989-06-06 1991-01-17 Dainippon Printing Co Ltd Method for correcting defect of emulsion mask or the like

Also Published As

Publication number Publication date
JPS6332380B2 (en) 1988-06-29

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