JPS57169243A - Correcting method for photo-mask-pattern - Google Patents

Correcting method for photo-mask-pattern

Info

Publication number
JPS57169243A
JPS57169243A JP5443081A JP5443081A JPS57169243A JP S57169243 A JPS57169243 A JP S57169243A JP 5443081 A JP5443081 A JP 5443081A JP 5443081 A JP5443081 A JP 5443081A JP S57169243 A JPS57169243 A JP S57169243A
Authority
JP
Japan
Prior art keywords
defect
correction
pattern
metal
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5443081A
Other languages
Japanese (ja)
Inventor
Katsuro Mizukoshi
Takeoki Miyauchi
Mikio Hongo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5443081A priority Critical patent/JPS57169243A/en
Publication of JPS57169243A publication Critical patent/JPS57169243A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects

Abstract

PURPOSE:To correct the defect of a mask without boring a hole to a metal forming the pattern by shaping a transparent film to the defect, mounting a transparent substrate with a metallic film for correction while opposing the substrate to said defect and irradiating laser beams to the metallic film for correction. CONSTITUTION:There is the defect 3 at one part of the pattern 2, the transparent film 10 is formed uniformly onto the whole surface by the oxidizing metal, the metal 5 for correction evaporated onto the transparent substrate 4 and the pattern 2 of the photo-mask with the defect 3 are opposed, and laser beams 6 are irradiated to the metal 5 for correction corresponding to the defect 3 from the transparent substrate 4 side. Accordingly, the metal 5 for correction is melted and evaporated and adheres on the defect section 3, and the metal 5 for correction adheres as dispersed bodies 8 having a high temperature and adheres at that time, but the pattern 2 is not bored because there is the transparent film 10.
JP5443081A 1981-04-13 1981-04-13 Correcting method for photo-mask-pattern Pending JPS57169243A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5443081A JPS57169243A (en) 1981-04-13 1981-04-13 Correcting method for photo-mask-pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5443081A JPS57169243A (en) 1981-04-13 1981-04-13 Correcting method for photo-mask-pattern

Publications (1)

Publication Number Publication Date
JPS57169243A true JPS57169243A (en) 1982-10-18

Family

ID=12970496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5443081A Pending JPS57169243A (en) 1981-04-13 1981-04-13 Correcting method for photo-mask-pattern

Country Status (1)

Country Link
JP (1) JPS57169243A (en)

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