JPS57204123A - Forming method for resist stencil mask - Google Patents

Forming method for resist stencil mask

Info

Publication number
JPS57204123A
JPS57204123A JP56088153A JP8815381A JPS57204123A JP S57204123 A JPS57204123 A JP S57204123A JP 56088153 A JP56088153 A JP 56088153A JP 8815381 A JP8815381 A JP 8815381A JP S57204123 A JPS57204123 A JP S57204123A
Authority
JP
Japan
Prior art keywords
chlorbenzene
liquid
mask
pattern
stencil mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56088153A
Other languages
Japanese (ja)
Inventor
Koji Yamada
Junji Shigeta
Mikio Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56088153A priority Critical patent/JPS57204123A/en
Publication of JPS57204123A publication Critical patent/JPS57204123A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To form the thick resist mask of an overhang section by a method wherein a positive type resist film shaped to the surface of a substrate is pre- baked, exposed, immersed in chlorbenzene and developed and treated by an alkaline developing liquid. CONSTITUTION:The positive type resist film 2 is spin-applied onto the substrate 1, pre-baked at a temperature such as 70 deg.C for time such as 30min, pattern- exposed, immersed in the chlorbenzene liquid for 15-30min, and devloped and treated in the developing liquid, thus forming the thick resist stencil mask of an overhang. The mask is utilized, a Pb alloy 3, etc. are evapoated, and a gate electrode, etc. are shaped through lift-off. Accordingly, a minute pattern having excellent accuracy of size of the pattern and cutting quality can be obtained in superior reproducibility because the thickness of the overhang section can be controlled by treating time in the chlorbenzene liquid.
JP56088153A 1981-06-10 1981-06-10 Forming method for resist stencil mask Pending JPS57204123A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56088153A JPS57204123A (en) 1981-06-10 1981-06-10 Forming method for resist stencil mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56088153A JPS57204123A (en) 1981-06-10 1981-06-10 Forming method for resist stencil mask

Publications (1)

Publication Number Publication Date
JPS57204123A true JPS57204123A (en) 1982-12-14

Family

ID=13934978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56088153A Pending JPS57204123A (en) 1981-06-10 1981-06-10 Forming method for resist stencil mask

Country Status (1)

Country Link
JP (1) JPS57204123A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130183A (en) * 1983-12-19 1985-07-11 Agency Of Ind Science & Technol Resist stencil mask for manufacturing josephson ic
JPS6164178A (en) * 1984-09-05 1986-04-02 Nippon Telegr & Teleph Corp <Ntt> Manufacture of superconductive circuit
JPH05211171A (en) * 1990-03-12 1993-08-20 Electron & Telecommun Res Inst Manufacture of gallium arsenide semiconductor element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130183A (en) * 1983-12-19 1985-07-11 Agency Of Ind Science & Technol Resist stencil mask for manufacturing josephson ic
JPH0526358B2 (en) * 1983-12-19 1993-04-15 Kogyo Gijutsuin
JPS6164178A (en) * 1984-09-05 1986-04-02 Nippon Telegr & Teleph Corp <Ntt> Manufacture of superconductive circuit
JPH05211171A (en) * 1990-03-12 1993-08-20 Electron & Telecommun Res Inst Manufacture of gallium arsenide semiconductor element

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