JPS5618430A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS5618430A
JPS5618430A JP9452879A JP9452879A JPS5618430A JP S5618430 A JPS5618430 A JP S5618430A JP 9452879 A JP9452879 A JP 9452879A JP 9452879 A JP9452879 A JP 9452879A JP S5618430 A JPS5618430 A JP S5618430A
Authority
JP
Japan
Prior art keywords
defect
element forming
substrate
forming layer
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9452879A
Other languages
Japanese (ja)
Inventor
Masamichi Yoshida
Atsuo Iida
Yunosuke Kawabe
Kazunori Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9452879A priority Critical patent/JPS5618430A/en
Publication of JPS5618430A publication Critical patent/JPS5618430A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To obtain a high quality substrate eliminating the immanent defect in the surface of the substrate by a method wherein ion implantation is performed to form previously a defect absorbing source at the place deeper than the element forming layer of the semiconductor substrate. CONSTITUTION:The defect absorbing source 2 is formed at a position D (for example, 15mum) in the surface of an Si substrate 1 deeper than the element forming layer by implanting H2 ion at the depth Rp (for example, 20mum) with high energy (20 M eV) by means of the ion implantation. By this way, the minute defect caused by impurities like O2, C, etc., existing in the element forming layer is absorbed, and the defect generated during the heat treatment process in the element forming process is absorbed to the absorbing source 2 and an element having superior performance can be obtained. As implanting ion, in addition to H2, He, Ne, Ar, Xe, N2, Si, C, O2, P, B, etc., can be used.
JP9452879A 1979-07-25 1979-07-25 Manufacture of semiconductor element Pending JPS5618430A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9452879A JPS5618430A (en) 1979-07-25 1979-07-25 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9452879A JPS5618430A (en) 1979-07-25 1979-07-25 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5618430A true JPS5618430A (en) 1981-02-21

Family

ID=14112824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9452879A Pending JPS5618430A (en) 1979-07-25 1979-07-25 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5618430A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844726A (en) * 1981-09-11 1983-03-15 Nippon Telegr & Teleph Corp <Ntt> Gettering method
JPS5854672A (en) * 1981-09-28 1983-03-31 Fujitsu Ltd Semiconductor device
JPS59111373A (en) * 1982-12-16 1984-06-27 Matsushita Electric Ind Co Ltd Compound semiconductor substrate and manufacture thereof
JPS59188925A (en) * 1983-04-12 1984-10-26 Toshiba Corp Manufacture of semiconductor device
JPS60160130A (en) * 1984-01-30 1985-08-21 Toshiba Corp Manufacture of semiconductor substrate
US4579601A (en) * 1983-07-29 1986-04-01 Kabushiki Kaisha Toshiba Method of growing a resistive epitaxial layer on a short lifetime epi-layer
US4693759A (en) * 1984-11-26 1987-09-15 Sony Corporation Method of forming a thin semiconductor film
US4740481A (en) * 1986-01-21 1988-04-26 Motorola Inc. Method of preventing hillock formation in polysilicon layer by oxygen implanation
JPS63151591A (en) * 1986-12-16 1988-06-24 株式会社小糸製作所 Illuminating-angle compensator for head lamp for car
JPS63158702A (en) * 1986-12-22 1988-07-01 株式会社小糸製作所 Head lamp for vehicle
JPS63162387A (en) * 1986-12-26 1988-07-05 株式会社小糸製作所 Illuminating angle compensator for head lamp for car
JPS63162388A (en) * 1986-12-26 1988-07-05 株式会社小糸製作所 Head lamp for car
JPS63246831A (en) * 1987-04-02 1988-10-13 Seiko Instr & Electronics Ltd Silicon crystal substrate
US4868720A (en) * 1987-08-17 1989-09-19 Koito Seisakusho Co., Ltd. Road surface-sensitive beam pattern leveling system for a vehicle headlamp
JPH0254933A (en) * 1988-08-19 1990-02-23 Toshiba Corp Manufacture of semiconductor device
JP2015050425A (en) * 2013-09-04 2015-03-16 株式会社Sumco Silicon wafer and method for manufacturing the same
JP2015050424A (en) * 2013-09-04 2015-03-16 株式会社Sumco Silicon wafer and method for manufacturing the same

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844726A (en) * 1981-09-11 1983-03-15 Nippon Telegr & Teleph Corp <Ntt> Gettering method
JPS6229894B2 (en) * 1981-09-11 1987-06-29 Nippon Telegraph & Telephone
JPS5854672A (en) * 1981-09-28 1983-03-31 Fujitsu Ltd Semiconductor device
JPS59111373A (en) * 1982-12-16 1984-06-27 Matsushita Electric Ind Co Ltd Compound semiconductor substrate and manufacture thereof
JPS59188925A (en) * 1983-04-12 1984-10-26 Toshiba Corp Manufacture of semiconductor device
US4579601A (en) * 1983-07-29 1986-04-01 Kabushiki Kaisha Toshiba Method of growing a resistive epitaxial layer on a short lifetime epi-layer
JPS60160130A (en) * 1984-01-30 1985-08-21 Toshiba Corp Manufacture of semiconductor substrate
US4693759A (en) * 1984-11-26 1987-09-15 Sony Corporation Method of forming a thin semiconductor film
US4740481A (en) * 1986-01-21 1988-04-26 Motorola Inc. Method of preventing hillock formation in polysilicon layer by oxygen implanation
JPS63151591A (en) * 1986-12-16 1988-06-24 株式会社小糸製作所 Illuminating-angle compensator for head lamp for car
JPS63158702A (en) * 1986-12-22 1988-07-01 株式会社小糸製作所 Head lamp for vehicle
JPS63162387A (en) * 1986-12-26 1988-07-05 株式会社小糸製作所 Illuminating angle compensator for head lamp for car
JPS63162388A (en) * 1986-12-26 1988-07-05 株式会社小糸製作所 Head lamp for car
JPS63246831A (en) * 1987-04-02 1988-10-13 Seiko Instr & Electronics Ltd Silicon crystal substrate
US4868720A (en) * 1987-08-17 1989-09-19 Koito Seisakusho Co., Ltd. Road surface-sensitive beam pattern leveling system for a vehicle headlamp
JPH0254933A (en) * 1988-08-19 1990-02-23 Toshiba Corp Manufacture of semiconductor device
JP2015050425A (en) * 2013-09-04 2015-03-16 株式会社Sumco Silicon wafer and method for manufacturing the same
JP2015050424A (en) * 2013-09-04 2015-03-16 株式会社Sumco Silicon wafer and method for manufacturing the same

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