JPS5678160A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5678160A JPS5678160A JP15459479A JP15459479A JPS5678160A JP S5678160 A JPS5678160 A JP S5678160A JP 15459479 A JP15459479 A JP 15459479A JP 15459479 A JP15459479 A JP 15459479A JP S5678160 A JPS5678160 A JP S5678160A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- impurity
- base layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012528 membrane Substances 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 238000011282 treatment Methods 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To manufacture the semiconductor device for an electric power having a large current-amplification factor by a method wherein after a base layer is formed on a surface of a semiconductor substrate with the help of a vapor growing process, impurity diffusing method and ion injecting method, the surface is etching-removed as deep as is prescribed and then an emitter layer is formed therein. CONSTITUTION:An SiO2 membrane 4 s cover-attached on the surface of the substrate 3 having an N<+> type region 1 for reducing a collector satulation resistance at the bottom and a collector region 2 with a comparatively high resistance, a window is opened corresponded to a base layer 6 which is intended to be formed, a P type impurity 5 is heaped over the whole surface by CVD method and heat treated in an oxidized atmosphere to form the P type base layer 6. Thereafter, the membrane 4 is removed with the impurity 5 thereon and the whole surface of the layer 6 is removed by about 15mum, using a mixed acid of fluoric acid, nitric acid and acetic acid made 1:2:1 in rate. After these treatments, a film oxide is formed on the whole surface of the substrate 3, the window is opened and the N type emitter layer 7 is diffusion-formed in the layer 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15459479A JPS5678160A (en) | 1979-11-29 | 1979-11-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15459479A JPS5678160A (en) | 1979-11-29 | 1979-11-29 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5678160A true JPS5678160A (en) | 1981-06-26 |
Family
ID=15587591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15459479A Pending JPS5678160A (en) | 1979-11-29 | 1979-11-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5678160A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6114758A (en) * | 1984-06-30 | 1986-01-22 | Sony Corp | Manufacture of semiconductor device |
| KR100418517B1 (en) * | 1996-12-13 | 2004-05-17 | 페어차일드코리아반도체 주식회사 | Power mos transistor |
-
1979
- 1979-11-29 JP JP15459479A patent/JPS5678160A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6114758A (en) * | 1984-06-30 | 1986-01-22 | Sony Corp | Manufacture of semiconductor device |
| KR100418517B1 (en) * | 1996-12-13 | 2004-05-17 | 페어차일드코리아반도체 주식회사 | Power mos transistor |
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