JPS57134936A - Forming method of insulation film on compound semiconductor - Google Patents

Forming method of insulation film on compound semiconductor

Info

Publication number
JPS57134936A
JPS57134936A JP56020221A JP2022181A JPS57134936A JP S57134936 A JPS57134936 A JP S57134936A JP 56020221 A JP56020221 A JP 56020221A JP 2022181 A JP2022181 A JP 2022181A JP S57134936 A JPS57134936 A JP S57134936A
Authority
JP
Japan
Prior art keywords
crystal
thermal
light
compound semiconductor
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56020221A
Other languages
Japanese (ja)
Inventor
Takeshi Kobayashi
Yukihiro Hirota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56020221A priority Critical patent/JPS57134936A/en
Publication of JPS57134936A publication Critical patent/JPS57134936A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To form thermal nitride or thermal oxide insulation films with improved property of the interface between compound semiconductor crystal and the insulation film, by thermal nitriding or thermal oxiding the surface of the crystal while irradiated by light. CONSTITUTION:In thermal nitriding in the NH3 gas atmosphere, or thermal oxiding in the oxygen atmosphere a compound semiconductor snch as InP, the surface of the crystal to be treated is irradiated with a light having larger energy than prohibiting band energy of the crystal to make electron density on the surface of the crystal higher than 10<18>/cm<3>. For instance, NH3 gas is poured in through a gas inlet. InP crystal 3 is placed on a quartz support 2. it is then irradiated with a light from a light source 4 through an opening made on an electric furnace 1. In nitriding by InP, irradiation of the light of 200W/cm<2> at 500 deg.C increases the growth rate 1.5 times but on the other hand decreases interface order density by one digit.
JP56020221A 1981-02-16 1981-02-16 Forming method of insulation film on compound semiconductor Pending JPS57134936A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56020221A JPS57134936A (en) 1981-02-16 1981-02-16 Forming method of insulation film on compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56020221A JPS57134936A (en) 1981-02-16 1981-02-16 Forming method of insulation film on compound semiconductor

Publications (1)

Publication Number Publication Date
JPS57134936A true JPS57134936A (en) 1982-08-20

Family

ID=12021105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56020221A Pending JPS57134936A (en) 1981-02-16 1981-02-16 Forming method of insulation film on compound semiconductor

Country Status (1)

Country Link
JP (1) JPS57134936A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231822A (en) * 1983-06-14 1984-12-26 Toshiba Corp Formation of nitride film
JPS62174925A (en) * 1986-01-28 1987-07-31 Sharp Corp Oxidization of silicon carbide semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421172A (en) * 1977-07-18 1979-02-17 Nec Corp Manufacture for semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421172A (en) * 1977-07-18 1979-02-17 Nec Corp Manufacture for semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231822A (en) * 1983-06-14 1984-12-26 Toshiba Corp Formation of nitride film
JPH0429222B2 (en) * 1983-06-14 1992-05-18
JPS62174925A (en) * 1986-01-28 1987-07-31 Sharp Corp Oxidization of silicon carbide semiconductor

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