JPS56157019A - Manufacture of substrate for semiconductor device - Google Patents

Manufacture of substrate for semiconductor device

Info

Publication number
JPS56157019A
JPS56157019A JP6085280A JP6085280A JPS56157019A JP S56157019 A JPS56157019 A JP S56157019A JP 6085280 A JP6085280 A JP 6085280A JP 6085280 A JP6085280 A JP 6085280A JP S56157019 A JPS56157019 A JP S56157019A
Authority
JP
Japan
Prior art keywords
layer
substrate
mask layer
polycrystalline
intermediary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6085280A
Other languages
Japanese (ja)
Inventor
Takashi Matsumoto
Tsutomu Ogawa
Haruhisa Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6085280A priority Critical patent/JPS56157019A/en
Publication of JPS56157019A publication Critical patent/JPS56157019A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To eliminate the bad effect on the mask layer and to obtain a single- crystal for subject substrate by a method wherein the mask layer is provided through the intermediary of an insulating layer on the surface of the polycrystalline semiconductor layer and a laser annealing is performed. CONSTITUTION:On an SiO2 substrate 1 provided on an Si semiconductor substrate 2, a polycrystalline Si layer 3 is formed, on the surface of which the mask layer 5 consisting of Al is formed through the intermediary of an SiO2 layer 4 and the polycrystalline Si of an aperture region 6 is single-crystallized by irradiating laser beam on the whole surface. Through these procedures, the Al on the mask layer 5 is not diffused in alloyed state or as impurities when a laser annealing is preformed and the expected normal single crystalization can be performed.
JP6085280A 1980-05-08 1980-05-08 Manufacture of substrate for semiconductor device Pending JPS56157019A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6085280A JPS56157019A (en) 1980-05-08 1980-05-08 Manufacture of substrate for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6085280A JPS56157019A (en) 1980-05-08 1980-05-08 Manufacture of substrate for semiconductor device

Publications (1)

Publication Number Publication Date
JPS56157019A true JPS56157019A (en) 1981-12-04

Family

ID=13154319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6085280A Pending JPS56157019A (en) 1980-05-08 1980-05-08 Manufacture of substrate for semiconductor device

Country Status (1)

Country Link
JP (1) JPS56157019A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928326A (en) * 1982-08-09 1984-02-15 Nippon Hoso Kyokai <Nhk> Preparation of member for three-dimensional integrated circuit
US4523962A (en) * 1982-12-13 1985-06-18 Mitsubishi Denki Kabushiki Kaisha Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor
US4543133A (en) * 1983-04-30 1985-09-24 Fujitsu Limited Process for producing single crystalline semiconductor island on insulator

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928326A (en) * 1982-08-09 1984-02-15 Nippon Hoso Kyokai <Nhk> Preparation of member for three-dimensional integrated circuit
US4523962A (en) * 1982-12-13 1985-06-18 Mitsubishi Denki Kabushiki Kaisha Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor
US4543133A (en) * 1983-04-30 1985-09-24 Fujitsu Limited Process for producing single crystalline semiconductor island on insulator

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