JPS55162234A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55162234A
JPS55162234A JP7035079A JP7035079A JPS55162234A JP S55162234 A JPS55162234 A JP S55162234A JP 7035079 A JP7035079 A JP 7035079A JP 7035079 A JP7035079 A JP 7035079A JP S55162234 A JPS55162234 A JP S55162234A
Authority
JP
Japan
Prior art keywords
film
substrate
boundary
ion injection
irradiating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7035079A
Other languages
Japanese (ja)
Inventor
Yoshio Miura
Koichiro Ootori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, Agency of Industrial Science and Technology filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP7035079A priority Critical patent/JPS55162234A/en
Publication of JPS55162234A publication Critical patent/JPS55162234A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Abstract

PURPOSE:To eliminate O2 shortage regions on the boundary and at the same time to eliminate loss or damage due to ion injection by the method wherein, when SiO2 film is formed on the surface of Si substrate, O2 ions are injected into the boundary and it is annealed by irradiating a light beam or an electron beam. CONSTITUTION:When SiO2 film 2 is grown on the surface of Si substrate 1 by heat-oxidization, region 3 lacking O2 is produced in the boundary between the lower surface of film 2 and the upper surface of substrate 1. For this reason, to supplement O2 shortage, O2 ions are injected. Subsequently, region 3 is removed by irradiating an Ar laser beam for a short time. Thus, the substrate and film 2 are integrated, and at the same time, losses and damages caused by the ion injection are repaired. Corresponding to the thickness of film 2 formed at this time, the amount of ion injection and the laser energy density are properly selected.
JP7035079A 1979-06-05 1979-06-05 Manufacture of semiconductor device Pending JPS55162234A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7035079A JPS55162234A (en) 1979-06-05 1979-06-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7035079A JPS55162234A (en) 1979-06-05 1979-06-05 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55162234A true JPS55162234A (en) 1980-12-17

Family

ID=13428886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7035079A Pending JPS55162234A (en) 1979-06-05 1979-06-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55162234A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153429A (en) * 1981-03-17 1982-09-22 Nec Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5160453A (en) * 1974-11-22 1976-05-26 Hitachi Ltd Shirikonsankamaku * sio2 * noanteikaho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5160453A (en) * 1974-11-22 1976-05-26 Hitachi Ltd Shirikonsankamaku * sio2 * noanteikaho

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153429A (en) * 1981-03-17 1982-09-22 Nec Corp Manufacture of semiconductor device
JPH0516174B2 (en) * 1981-03-17 1993-03-03 Nippon Electric Co

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