JPS5735329A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5735329A JPS5735329A JP11057080A JP11057080A JPS5735329A JP S5735329 A JPS5735329 A JP S5735329A JP 11057080 A JP11057080 A JP 11057080A JP 11057080 A JP11057080 A JP 11057080A JP S5735329 A JPS5735329 A JP S5735329A
- Authority
- JP
- Japan
- Prior art keywords
- oxygen
- defect
- region
- temperature heat
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000001301 oxygen Substances 0.000 abstract 6
- 229910052760 oxygen Inorganic materials 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 4
- 230000007547 defect Effects 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005247 gettering Methods 0.000 abstract 2
- -1 oxygen ions Chemical class 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910001385 heavy metal Inorganic materials 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 125000004430 oxygen atom Chemical group O* 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
PURPOSE:To form a defect-free region on the surface of a silicon substrate by executing gettering of microscopic defect and heavy metal, by conducting high-temperature and low-temperature heat treatments after injecting oxygen ions into a semiconductor substrate. CONSTITUTION:Oxygen ions 2 are injected into an entire surface of a silicon substrate 1, and a high-density injection region 3 is formed in the substrate. And then, by conducting high-temperature heat treatment in inert gas atmosphere, oxygen atoms are precipitated in the neighborhood of the peak of the injected oxygen density distribution and a layer 4 of precipitant of SiO2 is formed. By this high-temperature heat treatment, defect in the ion injecting layer is removed and a layer 5 of a low oxygen density and less defect is formed. And then, the silicon substrate is oxidized in dry oxygen atmosphere, microscopic defects composed of oxygen precipitants, etc. of the region 4 are made to grow, and by effects of intrinsic gettering, the region 5 is turned into a defect-free region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11057080A JPS5735329A (en) | 1980-08-11 | 1980-08-11 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11057080A JPS5735329A (en) | 1980-08-11 | 1980-08-11 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5735329A true JPS5735329A (en) | 1982-02-25 |
Family
ID=14539174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11057080A Pending JPS5735329A (en) | 1980-08-11 | 1980-08-11 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5735329A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60160130A (en) * | 1984-01-30 | 1985-08-21 | Toshiba Corp | Manufacture of semiconductor substrate |
| JPS6116532A (en) * | 1984-07-03 | 1986-01-24 | Matsushita Electric Ind Co Ltd | Semiconductor substrate and manufacture thereof |
| JPS62181421A (en) * | 1986-02-04 | 1987-08-08 | Mitsubishi Electric Corp | Manufacture of silicon epitaxial wafer |
| JPS63246831A (en) * | 1987-04-02 | 1988-10-13 | Seiko Instr & Electronics Ltd | Silicon crystal substrate |
| JP2016139817A (en) * | 2010-03-26 | 2016-08-04 | 株式会社半導体エネルギー研究所 | Method of manufacturing semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5331971A (en) * | 1976-09-06 | 1978-03-25 | Nippon Telegr & Teleph Corp <Ntt> | Forming method of metal oxide film or semiconductor oxide film |
-
1980
- 1980-08-11 JP JP11057080A patent/JPS5735329A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5331971A (en) * | 1976-09-06 | 1978-03-25 | Nippon Telegr & Teleph Corp <Ntt> | Forming method of metal oxide film or semiconductor oxide film |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60160130A (en) * | 1984-01-30 | 1985-08-21 | Toshiba Corp | Manufacture of semiconductor substrate |
| JPS6116532A (en) * | 1984-07-03 | 1986-01-24 | Matsushita Electric Ind Co Ltd | Semiconductor substrate and manufacture thereof |
| JPS62181421A (en) * | 1986-02-04 | 1987-08-08 | Mitsubishi Electric Corp | Manufacture of silicon epitaxial wafer |
| JPS63246831A (en) * | 1987-04-02 | 1988-10-13 | Seiko Instr & Electronics Ltd | Silicon crystal substrate |
| JP2016139817A (en) * | 2010-03-26 | 2016-08-04 | 株式会社半導体エネルギー研究所 | Method of manufacturing semiconductor device |
| US9954084B2 (en) | 2010-03-26 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
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