JPS57153429A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57153429A
JPS57153429A JP3849181A JP3849181A JPS57153429A JP S57153429 A JPS57153429 A JP S57153429A JP 3849181 A JP3849181 A JP 3849181A JP 3849181 A JP3849181 A JP 3849181A JP S57153429 A JPS57153429 A JP S57153429A
Authority
JP
Japan
Prior art keywords
film
excessive
ions
approximately
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3849181A
Other languages
Japanese (ja)
Other versions
JPH0516174B2 (en
Inventor
Yoshio Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3849181A priority Critical patent/JPS57153429A/en
Publication of JPS57153429A publication Critical patent/JPS57153429A/en
Publication of JPH0516174B2 publication Critical patent/JPH0516174B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H01L21/31155—Doping the insulating layers by ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To remove an excessive Si condition, and to obtain an excellent Si3N4 film by implanting N2 or O2 ions in the Si3N4 film and annealing the surface through radiation treatment or heat treatment. CONSTITUTION:A SiO2 film 2 with approximately 20Angstrom thickness is grown on a Si substrate 1, and the Si3N4 film 3 with approximately 450Angstrom thickness is laminated and coated onto the film 2. Since Si is normally contained excessively in the film 3 under this condition, the N2 ions accelerated at 10Kev are implanted at 2X10<13>/cm or the O2 ions in the same extent in order to remove the excessive Si. The surface is annealed by energy in the extent of approximately 1.2Joule/cm<2> by using a Nd:YAG laser. Accordingly, the N2 or O2 ions implanted are bonded with the excessive Si while a flow generated at the time of implantation is also repaired, and the Si3N4 film 4, which contains no excessive Si and characteristics thereof are excellent, is obtained.
JP3849181A 1981-03-17 1981-03-17 Manufacture of semiconductor device Granted JPS57153429A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3849181A JPS57153429A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3849181A JPS57153429A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57153429A true JPS57153429A (en) 1982-09-22
JPH0516174B2 JPH0516174B2 (en) 1993-03-03

Family

ID=12526727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3849181A Granted JPS57153429A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57153429A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264724A (en) * 1989-02-13 1993-11-23 The University Of Arkansas Silicon nitride for application as the gate dielectric in MOS devices
US5447885A (en) * 1993-10-25 1995-09-05 Samsung Electronics Co., Ltd. Isolation method of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5536935A (en) * 1978-09-06 1980-03-14 Hitachi Ltd Manufacturing of semiconductor device
JPS55162234A (en) * 1979-06-05 1980-12-17 Agency Of Ind Science & Technol Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5536935A (en) * 1978-09-06 1980-03-14 Hitachi Ltd Manufacturing of semiconductor device
JPS55162234A (en) * 1979-06-05 1980-12-17 Agency Of Ind Science & Technol Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264724A (en) * 1989-02-13 1993-11-23 The University Of Arkansas Silicon nitride for application as the gate dielectric in MOS devices
US5447885A (en) * 1993-10-25 1995-09-05 Samsung Electronics Co., Ltd. Isolation method of semiconductor device

Also Published As

Publication number Publication date
JPH0516174B2 (en) 1993-03-03

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