JPS572517A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS572517A JPS572517A JP7650780A JP7650780A JPS572517A JP S572517 A JPS572517 A JP S572517A JP 7650780 A JP7650780 A JP 7650780A JP 7650780 A JP7650780 A JP 7650780A JP S572517 A JPS572517 A JP S572517A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- back surface
- impurity
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 235000012431 wafers Nutrition 0.000 abstract 5
- 239000012535 impurity Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To prevent the dissipation of undesired impurity from the back surface of a water of disposing and heat treating many sets of two sheets of semiconductor wafer having no mask material on the back surface and intimately contacted between the back surface of the wafers in an oven at the prescribed interval. CONSTITUTION:An N<+>N<-> type semiconductor wafer 30 having an N<+> type region 31 and an N<-> type region 32 is prepared, and silicon dioxide films 33, 34 are selectively formed on the surface by an ordinary method. Many sets of two sheets of semiconductor wafers 30a, 30b intimately contacted back-to-back surface B are then formed, are implanted and supported on a boat 26 at the prescribed interval g, and are inserted into an oven 20. When the wafers are then heat treated in an impurity atmosphere, a P type impurity is diffused, and a P type base region 36 is then selectively formed in the region 32. When an N type impurity is similarly diffused, an N type emitter region 37 is formed. Thus, it is not necessary to form a mask material on the back surfaces B.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7650780A JPS572517A (en) | 1980-06-05 | 1980-06-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7650780A JPS572517A (en) | 1980-06-05 | 1980-06-05 | Manufacture of semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10159386A Division JPS61280615A (en) | 1986-04-30 | 1986-04-30 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS572517A true JPS572517A (en) | 1982-01-07 |
Family
ID=13607152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7650780A Pending JPS572517A (en) | 1980-06-05 | 1980-06-05 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS572517A (en) |
-
1980
- 1980-06-05 JP JP7650780A patent/JPS572517A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW269052B (en) | Process for semiconductor wafer, semiconductor integrated circuit and devices thereof | |
| JPS51127681A (en) | Manufacturing process of semiconductor device | |
| JPS572517A (en) | Manufacture of semiconductor device | |
| JPS5240059A (en) | Process for production of semiconductor device | |
| JPS56138920A (en) | Method of selection and diffusion for impurities | |
| JPS51114881A (en) | Semiconductor device manufacturing method | |
| JPS57201032A (en) | Silicon single crystal semiconductor device | |
| JPS57194566A (en) | Semiconductor device and manufacture thereof | |
| JPS5244169A (en) | Process for production of semiconductor device | |
| JPS57181128A (en) | Manufacture of semiconductor device | |
| JPS544069A (en) | Producing method of oxide film | |
| JPS51113461A (en) | A method for manufacturing semiconductor devices | |
| JPS5593269A (en) | Manufacture of semiconductor device | |
| JPS647625A (en) | Treating method for semiconductor substrate | |
| JPS56148823A (en) | Production of planer type semiconductor device | |
| JPS559425A (en) | Manufacturing method for semiconductor device | |
| JPS5618466A (en) | Manufacture of semiconductor device | |
| JPS52149968A (en) | Heat treatment method of semiconductor wafers | |
| JPS5724536A (en) | Preparation of semiconductor device | |
| JPS5710246A (en) | Manufacture of semiconductor device | |
| JPS6484719A (en) | Manufacture of semiconductor device | |
| JPS5244163A (en) | Process for productin of semiconductor element | |
| JPS5568676A (en) | Junction type field effect semiconductor device | |
| JPS52129373A (en) | Heat treatment method for silicon wafers | |
| JPS5790936A (en) | Impurity diffusing method |