JPS647625A - Treating method for semiconductor substrate - Google Patents
Treating method for semiconductor substrateInfo
- Publication number
- JPS647625A JPS647625A JP16328487A JP16328487A JPS647625A JP S647625 A JPS647625 A JP S647625A JP 16328487 A JP16328487 A JP 16328487A JP 16328487 A JP16328487 A JP 16328487A JP S647625 A JPS647625 A JP S647625A
- Authority
- JP
- Japan
- Prior art keywords
- oxygen
- operation region
- region
- oxygen concentration
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE:To surely form a dunuded zone on an operation region of a semiconductor element and to have an oxygen precipitated region approach the operation region by forming grooves on a semiconductor substrate, and then heat treating it to form a low oxygen concentration region in the depth of the operation region of an element formed at least on the surface of the substrate. CONSTITUTION:After grooves 3 are formed on a semiconductor substrate 1, it is heat treated to form a low oxygen concentration region over the depth of an operation region of an element formed at least on the surface of the substrate 1. For example, an SiO2 film and an Si3N4 film, etc., are formed on an Si wafer 1, trenches 3 are formed, an outer diffusion of oxygen is conducted at a temperature at which oxygen is not precipitated by heat treating in an inert gas. The oxygen near the surface of the wafer 1 is easily externally diffused particularly from the exposed part of the silicon of the trenches 3 at this time, and a denuded zone (DZ layer) 4 is surely formed on the operation region of a semiconductor element. Then, a low temperature heat treatment is so added that the oxygen precipitation does not occur in the low oxygen concentration in the DZ layer 4 but the oxygen precipitation occurs at the place other than that low oxygen concentration.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16328487A JPS647625A (en) | 1987-06-30 | 1987-06-30 | Treating method for semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16328487A JPS647625A (en) | 1987-06-30 | 1987-06-30 | Treating method for semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS647625A true JPS647625A (en) | 1989-01-11 |
Family
ID=15770893
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16328487A Pending JPS647625A (en) | 1987-06-30 | 1987-06-30 | Treating method for semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS647625A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0964444A2 (en) * | 1998-06-09 | 1999-12-15 | Siemens Aktiengesellschaft | Semiconductors having denuded zones |
KR100450676B1 (en) * | 2001-06-28 | 2004-10-01 | 삼성전자주식회사 | Method of fabricating silicon wafers including argon/ammonia rapid thermal annealing process, silicon wafers fabricated thereby |
JP2006156973A (en) * | 2004-10-25 | 2006-06-15 | Toyota Motor Corp | Manufacturing method of metal insulator semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60140830A (en) * | 1983-12-28 | 1985-07-25 | Fujitsu Ltd | Manufacture of semicoductor device |
-
1987
- 1987-06-30 JP JP16328487A patent/JPS647625A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60140830A (en) * | 1983-12-28 | 1985-07-25 | Fujitsu Ltd | Manufacture of semicoductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0964444A2 (en) * | 1998-06-09 | 1999-12-15 | Siemens Aktiengesellschaft | Semiconductors having denuded zones |
KR100450676B1 (en) * | 2001-06-28 | 2004-10-01 | 삼성전자주식회사 | Method of fabricating silicon wafers including argon/ammonia rapid thermal annealing process, silicon wafers fabricated thereby |
JP2006156973A (en) * | 2004-10-25 | 2006-06-15 | Toyota Motor Corp | Manufacturing method of metal insulator semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR940006183A (en) | Semiconductor substrate and processing method | |
JPS647625A (en) | Treating method for semiconductor substrate | |
JPS5740940A (en) | Semiconductor device | |
JPS6446937A (en) | Manufacture of semiconductor device | |
JPS5737830A (en) | Manufacture of semiconductor device | |
JPS57194525A (en) | Manufacture of semiconductor device | |
JPS5754333A (en) | Semiconductor device and preparation thereof | |
JPS57136334A (en) | Manufacture of semiconductor device | |
JPS57199227A (en) | Manufacture of semiconductor device | |
EP0305977A3 (en) | Method for doping a semiconductor integrated circuit | |
RU2183365C1 (en) | Method for boron diffusion in silicon plate | |
JPS5633840A (en) | Manufacture of semiconductor device | |
JPS56137620A (en) | Manufacture of semiconductor | |
JPS6415917A (en) | Forming method of high melting-point metallic film | |
JPS5693315A (en) | Manufacture of semiconductor device | |
JPS5690528A (en) | Surface treatment of semiconductor device | |
JPS56153766A (en) | Semiconductor device | |
JPS6446976A (en) | Manufacture of semiconductor integrated circuit device | |
JPS572517A (en) | Manufacture of semiconductor device | |
JPS57181128A (en) | Manufacture of semiconductor device | |
JPS54102965A (en) | Impurity diffusion method | |
FR2146929A1 (en) | Semiconductor elements separation - from diffused semiconductor wafer,using solder as mask for etching and cutting | |
JPS57206071A (en) | Semiconductor device and manufacture thereof | |
JPS6473615A (en) | Manufacture of iii-v compound semiconductor device | |
JPS57118633A (en) | Manufacture of semiconductor device |