FR2146929A1 - Semiconductor elements separation - from diffused semiconductor wafer,using solder as mask for etching and cutting - Google Patents
Semiconductor elements separation - from diffused semiconductor wafer,using solder as mask for etching and cuttingInfo
- Publication number
- FR2146929A1 FR2146929A1 FR7127300A FR7127300A FR2146929A1 FR 2146929 A1 FR2146929 A1 FR 2146929A1 FR 7127300 A FR7127300 A FR 7127300A FR 7127300 A FR7127300 A FR 7127300A FR 2146929 A1 FR2146929 A1 FR 2146929A1
- Authority
- FR
- France
- Prior art keywords
- mask
- elements
- cutting
- solder
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 229910000679 solder Inorganic materials 0.000 title abstract 2
- 238000005530 etching Methods 0.000 title 1
- 238000000926 separation method Methods 0.000 title 1
- 235000012431 wafers Nutrition 0.000 abstract 3
- 229910001092 metal group alloy Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
Abstract
Semiconductor elements are sepd. from a wafer, etc., of diffused semiconductor material by applying a mask of a metal alloy, which can be used for soldering the elements, to both sides of the wafer in the areas to be protected, exposing the unmasked areas to mechanical and/or chemical attack to obtain the individual elements and then remelting the metal alloy areas to level the solder surfaces of the elements. The technique is esp. useful for cutting elements from Si wafers. The danger of contaminating the pn-transition is eliminated.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7127300A FR2146929A1 (en) | 1971-07-26 | 1971-07-26 | Semiconductor elements separation - from diffused semiconductor wafer,using solder as mask for etching and cutting |
DE19712161749 DE2161749A1 (en) | 1971-07-26 | 1971-12-13 | METHOD OF DIVISIONING SEMICONDUCTOR ELEMENTS FROM A WASHER OR DGL. MADE OF SEMICONDUCTOR MATERIAL |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7127300A FR2146929A1 (en) | 1971-07-26 | 1971-07-26 | Semiconductor elements separation - from diffused semiconductor wafer,using solder as mask for etching and cutting |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2146929A1 true FR2146929A1 (en) | 1973-03-09 |
Family
ID=9080915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7127300A Withdrawn FR2146929A1 (en) | 1971-07-26 | 1971-07-26 | Semiconductor elements separation - from diffused semiconductor wafer,using solder as mask for etching and cutting |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE2161749A1 (en) |
FR (1) | FR2146929A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2312116A1 (en) * | 1975-05-20 | 1976-12-17 | Siemens Ag | PROCESS FOR MANUFACTURING SEMICONDUCTOR COMPONENTS |
-
1971
- 1971-07-26 FR FR7127300A patent/FR2146929A1/en not_active Withdrawn
- 1971-12-13 DE DE19712161749 patent/DE2161749A1/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2312116A1 (en) * | 1975-05-20 | 1976-12-17 | Siemens Ag | PROCESS FOR MANUFACTURING SEMICONDUCTOR COMPONENTS |
Also Published As
Publication number | Publication date |
---|---|
DE2161749A1 (en) | 1973-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5244173A (en) | Method of flat etching of silicon substrate | |
JPS5246784A (en) | Process for production of semiconductor device | |
FR2146929A1 (en) | Semiconductor elements separation - from diffused semiconductor wafer,using solder as mask for etching and cutting | |
JPS5240059A (en) | Process for production of semiconductor device | |
JPS5248468A (en) | Process for production of semiconductor device | |
JPS5242365A (en) | Tool for semiconductors | |
JPS5458381A (en) | Manufacture for semiconductor device | |
JPS5244795A (en) | Formation of silicon nitride film | |
JPS52106675A (en) | Manufacturing method of semiconductor device | |
JPS5339873A (en) | Etching method of silicon semiconductor substrate containing gold | |
JPS52139373A (en) | Treating method for compound semiconductor | |
JPS647625A (en) | Treating method for semiconductor substrate | |
JPS5246765A (en) | Method of producing semiconductor device | |
JPS57206071A (en) | Semiconductor device and manufacture thereof | |
JPS51134086A (en) | Method to manufacture distortion of semiconductor | |
JPS5354972A (en) | Production of semiconductor device | |
JPS52149968A (en) | Heat treatment method of semiconductor wafers | |
JPS5325350A (en) | Dicing method of semiconductor substrates | |
JPS5263666A (en) | Boron diffusion to silicon wafers | |
JPS5422759A (en) | Handling method for semiconductor wafer | |
JPS5271180A (en) | Etching solution of silicon | |
JPS5224462A (en) | Surface treatment of silicone wafer | |
JPS51113571A (en) | Precision processing method of semi-conductor | |
JPS5232682A (en) | Manufacturing process of semiconductor device | |
JPS51117871A (en) | Semiconductor substrate processing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |