JPS5263666A - Boron diffusion to silicon wafers - Google Patents
Boron diffusion to silicon wafersInfo
- Publication number
- JPS5263666A JPS5263666A JP13950175A JP13950175A JPS5263666A JP S5263666 A JPS5263666 A JP S5263666A JP 13950175 A JP13950175 A JP 13950175A JP 13950175 A JP13950175 A JP 13950175A JP S5263666 A JPS5263666 A JP S5263666A
- Authority
- JP
- Japan
- Prior art keywords
- silicon wafers
- boron diffusion
- wafer
- diffusion
- firing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To prevent the formation of insoluble boron silicate in hydrofluoric acid by coating B compound on an Si wafer, firing the wafer for 1W20 minutes in an O2 or N2 + O2 atmosphere at 600W1200°C, then subjecting the wafer to diffusion treatment.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13950175A JPS5263666A (en) | 1975-11-20 | 1975-11-20 | Boron diffusion to silicon wafers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13950175A JPS5263666A (en) | 1975-11-20 | 1975-11-20 | Boron diffusion to silicon wafers |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5263666A true JPS5263666A (en) | 1977-05-26 |
Family
ID=15246739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13950175A Pending JPS5263666A (en) | 1975-11-20 | 1975-11-20 | Boron diffusion to silicon wafers |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5263666A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5671933A (en) * | 1979-11-19 | 1981-06-15 | Toshiba Corp | Impurity diffusion to semiconductor substrate |
-
1975
- 1975-11-20 JP JP13950175A patent/JPS5263666A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5671933A (en) * | 1979-11-19 | 1981-06-15 | Toshiba Corp | Impurity diffusion to semiconductor substrate |
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