JPS55162235A - Forming nitride film - Google Patents

Forming nitride film

Info

Publication number
JPS55162235A
JPS55162235A JP6962579A JP6962579A JPS55162235A JP S55162235 A JPS55162235 A JP S55162235A JP 6962579 A JP6962579 A JP 6962579A JP 6962579 A JP6962579 A JP 6962579A JP S55162235 A JPS55162235 A JP S55162235A
Authority
JP
Japan
Prior art keywords
film
si3n4
laser beam
thickness
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6962579A
Other languages
Japanese (ja)
Other versions
JPS6410090B2 (en
Inventor
Yoichi Akasaka
Hiromi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6962579A priority Critical patent/JPS55162235A/en
Publication of JPS55162235A publication Critical patent/JPS55162235A/en
Publication of JPS6410090B2 publication Critical patent/JPS6410090B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain a thin film of uniform thickness with high precision by injecting nitrogen ions into the surface and then irradiating it with a laser beam, when a nitride film is formed on the surface layer of a semiconductor substrate. CONSTITUTION:The surface of Si substrate 1, excepting Si3N4 forming region, is covered with resist pattern 11. Ion injected layer 12 is formed by injecting N2<+> ions into the entire surface. The depth of layer 12 at this time is made about 2/3 of the thickness of Si3N4 film to be obtained. Subsequently, pattern 11 is removed, and heat treatment is operated by irradiating a laser beam. Here, the laser beam output power is selected at a proper level so that the surface of substrate 1 is melted to a depth of about 1/2 of the thickness of the Si3N4 film. By this, it is possible to obtain thin Si3N4 film of uniform thickness, suitable for use for non-volatile memory element or other semiconductor devices.
JP6962579A 1979-06-01 1979-06-01 Forming nitride film Granted JPS55162235A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6962579A JPS55162235A (en) 1979-06-01 1979-06-01 Forming nitride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6962579A JPS55162235A (en) 1979-06-01 1979-06-01 Forming nitride film

Publications (2)

Publication Number Publication Date
JPS55162235A true JPS55162235A (en) 1980-12-17
JPS6410090B2 JPS6410090B2 (en) 1989-02-21

Family

ID=13408230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6962579A Granted JPS55162235A (en) 1979-06-01 1979-06-01 Forming nitride film

Country Status (1)

Country Link
JP (1) JPS55162235A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098640A (en) * 1983-11-02 1985-06-01 Sony Corp Manufacture of semiconductor device
US5436175A (en) * 1993-10-04 1995-07-25 Sharp Microelectronics Technology, Inc. Shallow SIMOX processing method using molecular ion implantation
US5589407A (en) * 1995-09-06 1996-12-31 Implanted Material Technology, Inc. Method of treating silicon to obtain thin, buried insulating layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5524468A (en) * 1978-08-11 1980-02-21 Toshiba Corp Manufacture of semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5524468A (en) * 1978-08-11 1980-02-21 Toshiba Corp Manufacture of semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098640A (en) * 1983-11-02 1985-06-01 Sony Corp Manufacture of semiconductor device
US5436175A (en) * 1993-10-04 1995-07-25 Sharp Microelectronics Technology, Inc. Shallow SIMOX processing method using molecular ion implantation
US5589407A (en) * 1995-09-06 1996-12-31 Implanted Material Technology, Inc. Method of treating silicon to obtain thin, buried insulating layer

Also Published As

Publication number Publication date
JPS6410090B2 (en) 1989-02-21

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