JPS5683935A - Formation of metal layer - Google Patents

Formation of metal layer

Info

Publication number
JPS5683935A
JPS5683935A JP16119779A JP16119779A JPS5683935A JP S5683935 A JPS5683935 A JP S5683935A JP 16119779 A JP16119779 A JP 16119779A JP 16119779 A JP16119779 A JP 16119779A JP S5683935 A JPS5683935 A JP S5683935A
Authority
JP
Japan
Prior art keywords
amorphous
semiconductor
layer
formation
evaporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16119779A
Other languages
Japanese (ja)
Other versions
JPH0147004B2 (en
Inventor
Hisao Hayashi
Yasuo Hayashi
Takeshi Kuroda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP16119779A priority Critical patent/JPS5683935A/en
Publication of JPS5683935A publication Critical patent/JPS5683935A/en
Publication of JPH0147004B2 publication Critical patent/JPH0147004B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Abstract

PURPOSE:To obtain an even metal-semiconductor alloy layer with a uniformized energy absorption at laser annealing by making the surface of a semiconductor substrate amorphous beforehand with the irradiation of an ion beam. CONSTITUTION:Prior to evaporation of Pt, Si ion is injected into an Si substrate to laminate an amorphous layer. Then, after evaporation of Pt, YAG laser is irradiated to form an Si-Pt alloy layer. This arrangement provides an extremely even metal- semiconductor layer. Any atom can be used for injection only if it is able to render amorphous the surface of a semiconductor substrate.
JP16119779A 1979-12-12 1979-12-12 Formation of metal layer Granted JPS5683935A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16119779A JPS5683935A (en) 1979-12-12 1979-12-12 Formation of metal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16119779A JPS5683935A (en) 1979-12-12 1979-12-12 Formation of metal layer

Publications (2)

Publication Number Publication Date
JPS5683935A true JPS5683935A (en) 1981-07-08
JPH0147004B2 JPH0147004B2 (en) 1989-10-12

Family

ID=15730424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16119779A Granted JPS5683935A (en) 1979-12-12 1979-12-12 Formation of metal layer

Country Status (1)

Country Link
JP (1) JPS5683935A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07221044A (en) * 1994-02-08 1995-08-18 Nec Corp Manufacture of semiconductor device
US6790749B2 (en) 1992-10-09 2004-09-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP2020077822A (en) * 2018-11-09 2020-05-21 トヨタ自動車株式会社 Manufacturing method of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111128A (en) * 1979-02-20 1980-08-27 Nec Corp Manufacturing method of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111128A (en) * 1979-02-20 1980-08-27 Nec Corp Manufacturing method of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6790749B2 (en) 1992-10-09 2004-09-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7109108B2 (en) 1992-10-09 2006-09-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device having metal silicide
US7602020B2 (en) 1992-10-09 2009-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7723788B2 (en) 1992-10-09 2010-05-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US8017506B2 (en) 1992-10-09 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH07221044A (en) * 1994-02-08 1995-08-18 Nec Corp Manufacture of semiconductor device
JP2020077822A (en) * 2018-11-09 2020-05-21 トヨタ自動車株式会社 Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JPH0147004B2 (en) 1989-10-12

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