JPS6471121A - Formation of alloy layer - Google Patents

Formation of alloy layer

Info

Publication number
JPS6471121A
JPS6471121A JP15620988A JP15620988A JPS6471121A JP S6471121 A JPS6471121 A JP S6471121A JP 15620988 A JP15620988 A JP 15620988A JP 15620988 A JP15620988 A JP 15620988A JP S6471121 A JPS6471121 A JP S6471121A
Authority
JP
Japan
Prior art keywords
base body
layer
alloy layer
formation
onto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15620988A
Other languages
Japanese (ja)
Inventor
Hisao Hayashi
Yasuo Hayashi
Takeshi Kuroda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP15620988A priority Critical patent/JPS6471121A/en
Publication of JPS6471121A publication Critical patent/JPS6471121A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To absorb laser energy at the time of laser annealing uniformly, and to form an equal alloy layer by previously bringing the surface of a semiconductor base body into an amorphous state by the irradiation of ion beams. CONSTITUTION:Si atoms 3 are implanted to the surface 1a of an silicon semiconductor base body 1 through an ion implantation method, and an amorphous layer 2 is shaped onto the surface 1a of the base body. A thick Pt layer 4 is applied and formed onto the surface 1a of the base body through evaporation, the Pt layer 4 is irradiated with a YAG laser 5, and an Si-Pt alloy layer 6 is shaped onto the surface 1a of the base body. Accordingly, the Si-Pt alloy layer 6 having uniformity extremely better than a conventional laser annealing method is acquired.
JP15620988A 1988-06-24 1988-06-24 Formation of alloy layer Pending JPS6471121A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15620988A JPS6471121A (en) 1988-06-24 1988-06-24 Formation of alloy layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15620988A JPS6471121A (en) 1988-06-24 1988-06-24 Formation of alloy layer

Publications (1)

Publication Number Publication Date
JPS6471121A true JPS6471121A (en) 1989-03-16

Family

ID=15622749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15620988A Pending JPS6471121A (en) 1988-06-24 1988-06-24 Formation of alloy layer

Country Status (1)

Country Link
JP (1) JPS6471121A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08167657A (en) * 1994-12-14 1996-06-25 Nec Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08167657A (en) * 1994-12-14 1996-06-25 Nec Corp Manufacture of semiconductor device

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