JPS6471121A - Formation of alloy layer - Google Patents
Formation of alloy layerInfo
- Publication number
- JPS6471121A JPS6471121A JP15620988A JP15620988A JPS6471121A JP S6471121 A JPS6471121 A JP S6471121A JP 15620988 A JP15620988 A JP 15620988A JP 15620988 A JP15620988 A JP 15620988A JP S6471121 A JPS6471121 A JP S6471121A
- Authority
- JP
- Japan
- Prior art keywords
- base body
- layer
- alloy layer
- formation
- onto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To absorb laser energy at the time of laser annealing uniformly, and to form an equal alloy layer by previously bringing the surface of a semiconductor base body into an amorphous state by the irradiation of ion beams. CONSTITUTION:Si atoms 3 are implanted to the surface 1a of an silicon semiconductor base body 1 through an ion implantation method, and an amorphous layer 2 is shaped onto the surface 1a of the base body. A thick Pt layer 4 is applied and formed onto the surface 1a of the base body through evaporation, the Pt layer 4 is irradiated with a YAG laser 5, and an Si-Pt alloy layer 6 is shaped onto the surface 1a of the base body. Accordingly, the Si-Pt alloy layer 6 having uniformity extremely better than a conventional laser annealing method is acquired.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15620988A JPS6471121A (en) | 1988-06-24 | 1988-06-24 | Formation of alloy layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15620988A JPS6471121A (en) | 1988-06-24 | 1988-06-24 | Formation of alloy layer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6471121A true JPS6471121A (en) | 1989-03-16 |
Family
ID=15622749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15620988A Pending JPS6471121A (en) | 1988-06-24 | 1988-06-24 | Formation of alloy layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6471121A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08167657A (en) * | 1994-12-14 | 1996-06-25 | Nec Corp | Manufacture of semiconductor device |
-
1988
- 1988-06-24 JP JP15620988A patent/JPS6471121A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08167657A (en) * | 1994-12-14 | 1996-06-25 | Nec Corp | Manufacture of semiconductor device |
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