JPS5563818A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5563818A
JPS5563818A JP13657178A JP13657178A JPS5563818A JP S5563818 A JPS5563818 A JP S5563818A JP 13657178 A JP13657178 A JP 13657178A JP 13657178 A JP13657178 A JP 13657178A JP S5563818 A JPS5563818 A JP S5563818A
Authority
JP
Japan
Prior art keywords
opening
laser beam
impurity
ohmic contact
conduction type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13657178A
Other languages
Japanese (ja)
Other versions
JPS6140127B2 (en
Inventor
Kunio Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13657178A priority Critical patent/JPS5563818A/en
Publication of JPS5563818A publication Critical patent/JPS5563818A/en
Publication of JPS6140127B2 publication Critical patent/JPS6140127B2/ja
Granted legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To form an ohmic contact at the opening and at the same time to reduce the number of processes, by opening an impurity region of conduction type different from that of the substrate and increasing the depth of the impurity diffusion by irradiating a laser beam on the opening.
CONSTITUTION: Impurity ion beam 5 is irradiated on semiconductor substrate 1 of one conduction type, and impurity diffusion layer 6 of the other conduction type is formed. This is oxidized and is covered with oxide film 2. Next, the specified part on diffusion layer 6 is opened, and only the opening is subjected to the irradiation of laser beam 7 selectively. The diameter of laser beam 7 is set at about the same as that of the opening. By scanning, the irradiation is made uniform. Only the neighborhood of the opening of the shallow diffusion layer is deepened. Next, metal wiring 8 is provided, and by heating, an ohmic contact is formed between metal wiring 8 and impurity diffusion region 6. By this, alloy spike at the time of heating is prevented, and an ohmic contact is formed, and at the same time, the number of processes is reduced by omitting the formation of intermediate layers.
COPYRIGHT: (C)1980,JPO&Japio
JP13657178A 1978-11-06 1978-11-06 Manufacture of semiconductor device Granted JPS5563818A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13657178A JPS5563818A (en) 1978-11-06 1978-11-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13657178A JPS5563818A (en) 1978-11-06 1978-11-06 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5563818A true JPS5563818A (en) 1980-05-14
JPS6140127B2 JPS6140127B2 (en) 1986-09-08

Family

ID=15178363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13657178A Granted JPS5563818A (en) 1978-11-06 1978-11-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5563818A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS572544A (en) * 1980-06-06 1982-01-07 Hitachi Ltd Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352354A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Semiconductor local heating method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352354A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Semiconductor local heating method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS572544A (en) * 1980-06-06 1982-01-07 Hitachi Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6140127B2 (en) 1986-09-08

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