JPS5563818A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5563818A JPS5563818A JP13657178A JP13657178A JPS5563818A JP S5563818 A JPS5563818 A JP S5563818A JP 13657178 A JP13657178 A JP 13657178A JP 13657178 A JP13657178 A JP 13657178A JP S5563818 A JPS5563818 A JP S5563818A
- Authority
- JP
- Japan
- Prior art keywords
- opening
- laser beam
- impurity
- ohmic contact
- conduction type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To form an ohmic contact at the opening and at the same time to reduce the number of processes, by opening an impurity region of conduction type different from that of the substrate and increasing the depth of the impurity diffusion by irradiating a laser beam on the opening.
CONSTITUTION: Impurity ion beam 5 is irradiated on semiconductor substrate 1 of one conduction type, and impurity diffusion layer 6 of the other conduction type is formed. This is oxidized and is covered with oxide film 2. Next, the specified part on diffusion layer 6 is opened, and only the opening is subjected to the irradiation of laser beam 7 selectively. The diameter of laser beam 7 is set at about the same as that of the opening. By scanning, the irradiation is made uniform. Only the neighborhood of the opening of the shallow diffusion layer is deepened. Next, metal wiring 8 is provided, and by heating, an ohmic contact is formed between metal wiring 8 and impurity diffusion region 6. By this, alloy spike at the time of heating is prevented, and an ohmic contact is formed, and at the same time, the number of processes is reduced by omitting the formation of intermediate layers.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13657178A JPS5563818A (en) | 1978-11-06 | 1978-11-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13657178A JPS5563818A (en) | 1978-11-06 | 1978-11-06 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5563818A true JPS5563818A (en) | 1980-05-14 |
JPS6140127B2 JPS6140127B2 (en) | 1986-09-08 |
Family
ID=15178363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13657178A Granted JPS5563818A (en) | 1978-11-06 | 1978-11-06 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5563818A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS572544A (en) * | 1980-06-06 | 1982-01-07 | Hitachi Ltd | Manufacture of semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5352354A (en) * | 1976-10-25 | 1978-05-12 | Hitachi Ltd | Semiconductor local heating method |
-
1978
- 1978-11-06 JP JP13657178A patent/JPS5563818A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5352354A (en) * | 1976-10-25 | 1978-05-12 | Hitachi Ltd | Semiconductor local heating method |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS572544A (en) * | 1980-06-06 | 1982-01-07 | Hitachi Ltd | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6140127B2 (en) | 1986-09-08 |
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