JPS572544A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS572544A
JPS572544A JP7554180A JP7554180A JPS572544A JP S572544 A JPS572544 A JP S572544A JP 7554180 A JP7554180 A JP 7554180A JP 7554180 A JP7554180 A JP 7554180A JP S572544 A JPS572544 A JP S572544A
Authority
JP
Japan
Prior art keywords
laser beam
microminiaturization
annealed
emitted
injected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7554180A
Other languages
Japanese (ja)
Inventor
Eiji Takeda
Hitoshi Kume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7554180A priority Critical patent/JPS572544A/en
Publication of JPS572544A publication Critical patent/JPS572544A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To enable the formation of an ultra LSI without loss in its microminiaturization property by annealing only desired part with a laser beam or an electron beam capable of locally heating, thereby smoothing the profile of an impurity distribution. CONSTITUTION:When the withstand voltage of an MOSFET is improved, a thick field oxidized film 2 and a thin gate oxidized film 6 are formed, and a polysilicon gate 3 is then formed. Then, impurity ions are injected to form a source region 5 and a drain region 4, the latter are annealed, a CW laser beam 7 is emitted only to the region 4 to anneal it, and a diffusion depth is thus deepened. Thus, the electric field concentration can be alleviated to improve the withstand voltage. When a wire is formed, a pulse laser beam 7 is emitted to regions 9, 10 to which arsenic ions are injected, thereby obtaining a low resistance wire 9. Since only desired part is annealed in this case, the microminiaturization property cannot be lost.
JP7554180A 1980-06-06 1980-06-06 Manufacture of semiconductor device Pending JPS572544A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7554180A JPS572544A (en) 1980-06-06 1980-06-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7554180A JPS572544A (en) 1980-06-06 1980-06-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS572544A true JPS572544A (en) 1982-01-07

Family

ID=13579159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7554180A Pending JPS572544A (en) 1980-06-06 1980-06-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS572544A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352354A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Semiconductor local heating method
JPS5563818A (en) * 1978-11-06 1980-05-14 Nec Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352354A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Semiconductor local heating method
JPS5563818A (en) * 1978-11-06 1980-05-14 Nec Corp Manufacture of semiconductor device

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