JPS57187963A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57187963A JPS57187963A JP7250281A JP7250281A JPS57187963A JP S57187963 A JPS57187963 A JP S57187963A JP 7250281 A JP7250281 A JP 7250281A JP 7250281 A JP7250281 A JP 7250281A JP S57187963 A JPS57187963 A JP S57187963A
- Authority
- JP
- Japan
- Prior art keywords
- film
- contact part
- metal
- contact
- polycrystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 2
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- 229910007277 Si3 N4 Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
- H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To realize high speed operation by a method wherein a contact part of an emitter electrode is covered by a polycrystal Si film and the surface of the film is covered by an insulation film and a metal silicide film is formed on a Schottky junction of a Schottky barrier diode. CONSTITUTION:An SiO2 film 16' is formed on the surface of Si other than a Schottky barrier diode part, an emitter contact part 23 and a collector contact part 20 using an Si3 N4 film. Then apartures at the contact parts 23 and 20 are drilled leaving a film 15 of the diode part only. Then a polycrystal Si film 21 is formed. Then the film 21 is patterned so as to cover at least the contact part 23 of the contact parts 23 and 20. Then arsenic is injected by ion-injection and an emitter region 23 is formed by thermal treatment in oxidizing atmosphere. The film 15 of the diode part is removed self-matchingly and an aperture is made. Then a metal film is formed and a metal silicide film 24 is formed only on the aperture. Then a film 22 on the film 21 is removed. Then a separation film 25 which prevents the film 24 and a metal film 26 from reaction is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7250281A JPS57187963A (en) | 1981-05-14 | 1981-05-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7250281A JPS57187963A (en) | 1981-05-14 | 1981-05-14 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57187963A true JPS57187963A (en) | 1982-11-18 |
| JPS6335109B2 JPS6335109B2 (en) | 1988-07-13 |
Family
ID=13491171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7250281A Granted JPS57187963A (en) | 1981-05-14 | 1981-05-14 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57187963A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59111375A (en) * | 1982-12-08 | 1984-06-27 | エヌ・ベ−・フイリップス・フル−イランペンファブリケン | Semiconductor device and method of producing same |
| JPS59121872A (en) * | 1982-12-15 | 1984-07-14 | Fujitsu Ltd | Semiconductor device |
| JPS59161060A (en) * | 1982-12-20 | 1984-09-11 | レイセオン カンパニ− | Method of producing semiconductor device |
| JPS63257269A (en) * | 1987-04-14 | 1988-10-25 | Fujitsu Ltd | Formation of contact in semiconductor device |
| JPH02125463A (en) * | 1988-11-04 | 1990-05-14 | Hitachi Ltd | Manufacture of semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5177076A (en) * | 1974-12-27 | 1976-07-03 | Fujitsu Ltd | HANDOTAISOCHINOSEIZOHOHO |
-
1981
- 1981-05-14 JP JP7250281A patent/JPS57187963A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5177076A (en) * | 1974-12-27 | 1976-07-03 | Fujitsu Ltd | HANDOTAISOCHINOSEIZOHOHO |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59111375A (en) * | 1982-12-08 | 1984-06-27 | エヌ・ベ−・フイリップス・フル−イランペンファブリケン | Semiconductor device and method of producing same |
| JPH0455348B2 (en) * | 1982-12-08 | 1992-09-03 | Fuiritsupusu Furuuiranpenfuaburiken Nv | |
| JPS59121872A (en) * | 1982-12-15 | 1984-07-14 | Fujitsu Ltd | Semiconductor device |
| JPS59161060A (en) * | 1982-12-20 | 1984-09-11 | レイセオン カンパニ− | Method of producing semiconductor device |
| JPH0510827B2 (en) * | 1982-12-20 | 1993-02-10 | Raytheon Co | |
| JPS63257269A (en) * | 1987-04-14 | 1988-10-25 | Fujitsu Ltd | Formation of contact in semiconductor device |
| JPH02125463A (en) * | 1988-11-04 | 1990-05-14 | Hitachi Ltd | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6335109B2 (en) | 1988-07-13 |
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