JPS5618467A - Manufacture of silicon gate mis semiconductor device - Google Patents
Manufacture of silicon gate mis semiconductor deviceInfo
- Publication number
- JPS5618467A JPS5618467A JP9377179A JP9377179A JPS5618467A JP S5618467 A JPS5618467 A JP S5618467A JP 9377179 A JP9377179 A JP 9377179A JP 9377179 A JP9377179 A JP 9377179A JP S5618467 A JPS5618467 A JP S5618467A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- film
- silicon
- manufacture
- mis semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 abstract 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To increase the integration of a silicon gate MIS semiconductor device by forming a source and a drain and their contact openings by a self-alignment process. CONSTITUTION:After a silicon nitride film is cut out by utilizing a sputtering process or electron beam process, silicon nitride film is retained only on the portion except a gate electrode polycrystalline silicon film 4 by a lift-off process, is entirely thermally oxidized to form a thick thermal oxide silicon film 7 only on the film 4, and the source and the drain 8 and their contact openings 11, 12 are thereby formed by a self-alignment process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9377179A JPS5618467A (en) | 1979-07-25 | 1979-07-25 | Manufacture of silicon gate mis semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9377179A JPS5618467A (en) | 1979-07-25 | 1979-07-25 | Manufacture of silicon gate mis semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5618467A true JPS5618467A (en) | 1981-02-21 |
Family
ID=14091682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9377179A Pending JPS5618467A (en) | 1979-07-25 | 1979-07-25 | Manufacture of silicon gate mis semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5618467A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS581672A (en) * | 1981-06-23 | 1983-01-07 | 東洋製罐株式会社 | Thermally sealed package which is easily unsealed |
| US7005332B2 (en) * | 2004-07-06 | 2006-02-28 | Chunghwa Picture Tubes, Ltd. | Fabrication method of thin film transistor |
-
1979
- 1979-07-25 JP JP9377179A patent/JPS5618467A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS581672A (en) * | 1981-06-23 | 1983-01-07 | 東洋製罐株式会社 | Thermally sealed package which is easily unsealed |
| JPS6119496B2 (en) * | 1981-06-23 | 1986-05-17 | Toyo Seikan Kaisha Ltd | |
| US7005332B2 (en) * | 2004-07-06 | 2006-02-28 | Chunghwa Picture Tubes, Ltd. | Fabrication method of thin film transistor |
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