JPS644073A - Power transistor with protective function against overheating - Google Patents
Power transistor with protective function against overheatingInfo
- Publication number
- JPS644073A JPS644073A JP62157599A JP15759987A JPS644073A JP S644073 A JPS644073 A JP S644073A JP 62157599 A JP62157599 A JP 62157599A JP 15759987 A JP15759987 A JP 15759987A JP S644073 A JPS644073 A JP S644073A
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- make
- tunnel current
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000013021 overheating Methods 0.000 title abstract 2
- 230000009993 protective function Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
Abstract
PURPOSE:To use a below tunnel current on an abnormal rise in temperature and to make a gate voltage close to a source voltage or to make a base voltage close to an emitter voltage so that a power transistor is cut off to realize protection against overheating, by forming an insulating film on a gate electrode thinly in degree of making a FowlerNordheim tunnel current flow therein. CONSTITUTION:A polycrystalline Si gate 4 on a gate oxide film 3 formed on an n-type layer 2 is used as a mask so as to perform double diffusion of a (p) well 5 serving as a channel region and an n<+> source 6 serving as a source region so that a vertical type MOSFET is formed. After an SiO2 film 7 is piled by a CVD method or the like, the region 8 where tunnel MOS structure is formed is removed by an etching method and then a poly Si 4's surface on this region is heat-oxidized to form an oxide film 9 thinly in degree of for example 150Angstrom in thickness. When a positive bias is applied to the side of the semiconductor in MOS structure formed in this way, a potential wall is made thinner to make a Fowler-Nordheim tunnel current flow therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62157599A JPS644073A (en) | 1987-06-26 | 1987-06-26 | Power transistor with protective function against overheating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62157599A JPS644073A (en) | 1987-06-26 | 1987-06-26 | Power transistor with protective function against overheating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS644073A true JPS644073A (en) | 1989-01-09 |
Family
ID=15653236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62157599A Pending JPS644073A (en) | 1987-06-26 | 1987-06-26 | Power transistor with protective function against overheating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS644073A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5493144A (en) * | 1992-03-31 | 1996-02-20 | Sgs-Thomson Microelectronics, Inc. | Field progammable device with contact openings |
| US6236088B1 (en) * | 1997-06-30 | 2001-05-22 | Intersil Corporation | Semiconductor device gate structure for thermal overload protection |
-
1987
- 1987-06-26 JP JP62157599A patent/JPS644073A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5493144A (en) * | 1992-03-31 | 1996-02-20 | Sgs-Thomson Microelectronics, Inc. | Field progammable device with contact openings |
| US5856233A (en) * | 1992-03-31 | 1999-01-05 | Stmicroelectronics, Inc. | Method of forming a field programmable device |
| US6236088B1 (en) * | 1997-06-30 | 2001-05-22 | Intersil Corporation | Semiconductor device gate structure for thermal overload protection |
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