JPS5277682A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5277682A
JPS5277682A JP50155185A JP15518575A JPS5277682A JP S5277682 A JPS5277682 A JP S5277682A JP 50155185 A JP50155185 A JP 50155185A JP 15518575 A JP15518575 A JP 15518575A JP S5277682 A JPS5277682 A JP S5277682A
Authority
JP
Japan
Prior art keywords
construct
case
electrode
manufacture
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50155185A
Other languages
Japanese (ja)
Inventor
Osamu Wada
Shintaro Yanagisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50155185A priority Critical patent/JPS5277682A/en
Publication of JPS5277682A publication Critical patent/JPS5277682A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: Opening the hole used to construct each electrode in photoresist layer on the active layer, metal beam is irradiated from oblique direction in case of depositing metal used to construct ohmic contact electrode and from vertical direction in case of depositing metal used to construct Schottky barrier gate electrode to construct both electrodes with a sigle mask matching process by this way.
COPYRIGHT: (C)1977,JPO&Japio
JP50155185A 1975-12-24 1975-12-24 Manufacture of semiconductor device Pending JPS5277682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50155185A JPS5277682A (en) 1975-12-24 1975-12-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50155185A JPS5277682A (en) 1975-12-24 1975-12-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5277682A true JPS5277682A (en) 1977-06-30

Family

ID=15600330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50155185A Pending JPS5277682A (en) 1975-12-24 1975-12-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5277682A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61154080A (en) * 1984-07-06 1986-07-12 テキサス　インスツルメンツ　インコ−ポレイテツド Source structure of field effect transistor
JPS63173375A (en) * 1987-01-13 1988-07-16 Nec Corp Schottky junction type field-effect transistor
US4792531A (en) * 1987-10-05 1988-12-20 Menlo Industries, Inc. Self-aligned gate process
US5229323A (en) * 1987-08-21 1993-07-20 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device with Schottky electrodes
US5529952A (en) * 1994-09-20 1996-06-25 Texas Instruments Incorporated Method of fabricating lateral resonant tunneling structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61154080A (en) * 1984-07-06 1986-07-12 テキサス　インスツルメンツ　インコ−ポレイテツド Source structure of field effect transistor
JPS63173375A (en) * 1987-01-13 1988-07-16 Nec Corp Schottky junction type field-effect transistor
US5229323A (en) * 1987-08-21 1993-07-20 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device with Schottky electrodes
US4792531A (en) * 1987-10-05 1988-12-20 Menlo Industries, Inc. Self-aligned gate process
US5529952A (en) * 1994-09-20 1996-06-25 Texas Instruments Incorporated Method of fabricating lateral resonant tunneling structure

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