JPS5563819A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5563819A
JPS5563819A JP13657278A JP13657278A JPS5563819A JP S5563819 A JPS5563819 A JP S5563819A JP 13657278 A JP13657278 A JP 13657278A JP 13657278 A JP13657278 A JP 13657278A JP S5563819 A JPS5563819 A JP S5563819A
Authority
JP
Japan
Prior art keywords
metal wiring
opening
metal
formed
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13657278A
Inventor
Kunio Nakamura
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP13657278A priority Critical patent/JPS5563819A/en
Publication of JPS5563819A publication Critical patent/JPS5563819A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To obtain a good ohmic contact by the eutectic crystallization of a metal and a semiconductor, by opening an insulation film on an impurity region and providing a metal wiring here, and irradiating a laser beam on the part where the metal wiring and the impurity region are in contact.
CONSTITUTION: An opening is provided on insulation film 2 on impurity diffusion region 3 of conduction type opposite to that of the substrate formed on semiconductor substrate 1. Next, metal wiring layer 4 is formed on the opening, and a laser beam is irradiated on metal wiring layer 4. By this, uniform eutectic alloy layer 6 is fromed on the metal-semiconductor boundary. Since the time of irradiation is short (about 10 sec), alloy spike is prevented and a good ohmic contact is formed.
COPYRIGHT: (C)1980,JPO&Japio
JP13657278A 1978-11-06 1978-11-06 Manufacture of semiconductor device Pending JPS5563819A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13657278A JPS5563819A (en) 1978-11-06 1978-11-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13657278A JPS5563819A (en) 1978-11-06 1978-11-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5563819A true JPS5563819A (en) 1980-05-14

Family

ID=15178387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13657278A Pending JPS5563819A (en) 1978-11-06 1978-11-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5563819A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS566434A (en) * 1979-06-28 1981-01-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4617723A (en) * 1982-12-28 1986-10-21 Fujitsu Limited Method and device for creating an activatable conducting link in a semiconductor device
JPS639118A (en) * 1986-06-30 1988-01-14 Agency Of Ind Science & Technol Method for forming ohmic electrode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146559A (en) * 1976-05-31 1977-12-06 Nippon Telegr & Teleph Corp <Ntt> Electrode forming method
JPS5522811A (en) * 1978-08-04 1980-02-18 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacturing of semiconductor apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146559A (en) * 1976-05-31 1977-12-06 Nippon Telegr & Teleph Corp <Ntt> Electrode forming method
JPS5522811A (en) * 1978-08-04 1980-02-18 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacturing of semiconductor apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS566434A (en) * 1979-06-28 1981-01-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4617723A (en) * 1982-12-28 1986-10-21 Fujitsu Limited Method and device for creating an activatable conducting link in a semiconductor device
JPS639118A (en) * 1986-06-30 1988-01-14 Agency Of Ind Science & Technol Method for forming ohmic electrode

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