JPS5455371A - Controlling method of minority carrier diffusion length - Google Patents

Controlling method of minority carrier diffusion length

Info

Publication number
JPS5455371A
JPS5455371A JP12264477A JP12264477A JPS5455371A JP S5455371 A JPS5455371 A JP S5455371A JP 12264477 A JP12264477 A JP 12264477A JP 12264477 A JP12264477 A JP 12264477A JP S5455371 A JPS5455371 A JP S5455371A
Authority
JP
Japan
Prior art keywords
diffusion length
distribution
recombination centers
carrier diffusion
hence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12264477A
Other languages
Japanese (ja)
Other versions
JPS582449B2 (en
Inventor
Jiyunkou Takagi
Tadaaki Inoue
Koji Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP52122644A priority Critical patent/JPS582449B2/en
Publication of JPS5455371A publication Critical patent/JPS5455371A/en
Publication of JPS582449B2 publication Critical patent/JPS582449B2/en
Expired legal-status Critical Current

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  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To reduce minority carrier diffusion length by making positive use of recombination centers generated by ion radiation damages.
CONSTITUTION: The distribution of recombination centers is considered primary- approximately identical in shape to the energy distribution released as a result of impingement with atom nuclei by ion implantation. The defect distribution when light atom ions are implanted increases from the substrate surface toward the inside, becomes meximum at the portion RD slightly shallower than the projection range RP of primary incident ions, and thereafter sharply decreases. Hence, the distribution of the recombination centers immediate after the implantion in analogous to the defect distribution, wherein the maniority carrier diffusion length becomes shortest at RD, thence increases to become of the value at the time unimplanted time. When annealing is done, annihilation progresses from the portions where defects are small and ends at RD. Hence, the recombination centers are left only at RD by making conditions optimum, whereby only the diffusion length of the minority carriers there may be shortened
COPYRIGHT: (C)1979,JPO&Japio
JP52122644A 1977-10-12 1977-10-12 Control method for minority carrier diffusion length Expired JPS582449B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52122644A JPS582449B2 (en) 1977-10-12 1977-10-12 Control method for minority carrier diffusion length

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52122644A JPS582449B2 (en) 1977-10-12 1977-10-12 Control method for minority carrier diffusion length

Publications (2)

Publication Number Publication Date
JPS5455371A true JPS5455371A (en) 1979-05-02
JPS582449B2 JPS582449B2 (en) 1983-01-17

Family

ID=14841063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52122644A Expired JPS582449B2 (en) 1977-10-12 1977-10-12 Control method for minority carrier diffusion length

Country Status (1)

Country Link
JP (1) JPS582449B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108935A (en) * 1990-11-16 1992-04-28 Texas Instruments Incorporated Reduction of hot carrier effects in semiconductor devices by controlled scattering via the intentional introduction of impurities
US5869377A (en) * 1984-08-22 1999-02-09 Mitsubishi Denki Kabushiki Kaisha Method of fabrication LDD semiconductor device with amorphous regions
EP1484789A1 (en) * 1998-08-05 2004-12-08 MEMC Electronic Materials, Inc. Non-uniform minority carrier lifetime distributions in high performance silicon power devices
EP1110236B1 (en) * 1998-08-05 2006-10-18 MEMC Electronic Materials, Inc. Non-uniform minority carrier lifetime distributions in high performance silicon power devices
US7242037B2 (en) 1998-08-05 2007-07-10 Memc Electronic Materials, Inc. Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTION ON NVCLEAR SCIENCE=1963 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5869377A (en) * 1984-08-22 1999-02-09 Mitsubishi Denki Kabushiki Kaisha Method of fabrication LDD semiconductor device with amorphous regions
US5108935A (en) * 1990-11-16 1992-04-28 Texas Instruments Incorporated Reduction of hot carrier effects in semiconductor devices by controlled scattering via the intentional introduction of impurities
EP1484789A1 (en) * 1998-08-05 2004-12-08 MEMC Electronic Materials, Inc. Non-uniform minority carrier lifetime distributions in high performance silicon power devices
EP1110236B1 (en) * 1998-08-05 2006-10-18 MEMC Electronic Materials, Inc. Non-uniform minority carrier lifetime distributions in high performance silicon power devices
US7242037B2 (en) 1998-08-05 2007-07-10 Memc Electronic Materials, Inc. Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices
US7618879B2 (en) 1998-08-05 2009-11-17 Memc Electronics Materials, Inc. Non-uniform minority carrier lifetime distributions in high performance silicon power devices

Also Published As

Publication number Publication date
JPS582449B2 (en) 1983-01-17

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