JPS567439A - Treating method for semiconductor substrate - Google Patents
Treating method for semiconductor substrateInfo
- Publication number
- JPS567439A JPS567439A JP8321079A JP8321079A JPS567439A JP S567439 A JPS567439 A JP S567439A JP 8321079 A JP8321079 A JP 8321079A JP 8321079 A JP8321079 A JP 8321079A JP S567439 A JPS567439 A JP S567439A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- damaged
- heated
- beams
- irradiated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Abstract
PURPOSE:To prevent the generation of unnecessary thermal stress and pollution in a semiconductor element by a method wherein beams are locally irradiated only to fixed portions containing damaged regions and the portions are heated. CONSTITUTION:Laser beams, etc. are irradiated to inactive regions having no effect on characteristics on a semiconductor wafer or element, and grid damage is given to the regions. The damaged regions 2 and their near regions are locally heated by laser beams 4, whose area are larger than the regions 2. In this case, the damaged regions 2 heated have gettering action, and the heating regions 5 near the regions 2 are clarified by gettering. According to this method, the diameters of thermic ray beams 3, 4 can arbitrarily be adjusted, and treatment is easy. When an element is formed at an appropriate location of the heating regions 5 except the damaged regions 2, its characteristic is excellent.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8321079A JPS567439A (en) | 1979-06-29 | 1979-06-29 | Treating method for semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8321079A JPS567439A (en) | 1979-06-29 | 1979-06-29 | Treating method for semiconductor substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS567439A true JPS567439A (en) | 1981-01-26 |
JPS6125214B2 JPS6125214B2 (en) | 1986-06-14 |
Family
ID=13795954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8321079A Granted JPS567439A (en) | 1979-06-29 | 1979-06-29 | Treating method for semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS567439A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59115530A (en) * | 1982-12-15 | 1984-07-04 | ワツカ−−ヘミトロニク・ゲゼルシヤフト・フユア・エレクトロニク−グルントシユトツフエ・ミツト・ベシユレンクテル・ハフツング | Method of producing semiconductor wafer with back surface gettering action |
WO1990000812A1 (en) * | 1988-07-08 | 1990-01-25 | Engelsberg Audrey C | Removal of surface contaminants by irradiation from a high-energy source |
US5099557A (en) * | 1988-07-08 | 1992-03-31 | Engelsberg Audrey C | Removal of surface contaminants by irradiation from a high-energy source |
US5531857A (en) * | 1988-07-08 | 1996-07-02 | Cauldron Limited Partnership | Removal of surface contaminants by irradiation from a high energy source |
US5821175A (en) * | 1988-07-08 | 1998-10-13 | Cauldron Limited Partnership | Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface |
-
1979
- 1979-06-29 JP JP8321079A patent/JPS567439A/en active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59115530A (en) * | 1982-12-15 | 1984-07-04 | ワツカ−−ヘミトロニク・ゲゼルシヤフト・フユア・エレクトロニク−グルントシユトツフエ・ミツト・ベシユレンクテル・ハフツング | Method of producing semiconductor wafer with back surface gettering action |
JPH0334852B2 (en) * | 1982-12-15 | 1991-05-24 | Watsukaa Hiemitoroonitsuku G Fuyuuru Erekutorooniku Guruntoshutotsufue Mbh | |
WO1990000812A1 (en) * | 1988-07-08 | 1990-01-25 | Engelsberg Audrey C | Removal of surface contaminants by irradiation from a high-energy source |
US5024968A (en) * | 1988-07-08 | 1991-06-18 | Engelsberg Audrey C | Removal of surface contaminants by irradiation from a high-energy source |
US5099557A (en) * | 1988-07-08 | 1992-03-31 | Engelsberg Audrey C | Removal of surface contaminants by irradiation from a high-energy source |
US5531857A (en) * | 1988-07-08 | 1996-07-02 | Cauldron Limited Partnership | Removal of surface contaminants by irradiation from a high energy source |
US5821175A (en) * | 1988-07-08 | 1998-10-13 | Cauldron Limited Partnership | Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface |
Also Published As
Publication number | Publication date |
---|---|
JPS6125214B2 (en) | 1986-06-14 |
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