JPS566432A - Treatment of semiconductor substrate - Google Patents

Treatment of semiconductor substrate

Info

Publication number
JPS566432A
JPS566432A JP8095679A JP8095679A JPS566432A JP S566432 A JPS566432 A JP S566432A JP 8095679 A JP8095679 A JP 8095679A JP 8095679 A JP8095679 A JP 8095679A JP S566432 A JPS566432 A JP S566432A
Authority
JP
Japan
Prior art keywords
wafer
element forming
region
defects
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8095679A
Other languages
Japanese (ja)
Inventor
Takanori Hayafuji
Seiji Kawato
Yoshio Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP8095679A priority Critical patent/JPS566432A/en
Publication of JPS566432A publication Critical patent/JPS566432A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To absorb defects on the element forming regions with the gettering on the damage treating area by irradiating laser beam or the like on the element forming surface of the wafer to cause the thermal stress, followed by heat treatment. CONSTITUTION:A laser beam of proper intensity enough to prevent defects on the crystal such as dislocation from developing outwards from the damaged area is used to irradiate on a portion of the element forming surface of the wafer 1 to form a damage region 2. Then, the wafer 1 thus treated undergoes a treatment so that defects on the specified element forming region 3 can be absorbed by the damaged region 2. The damaged region is formed surrounding the wafer, or on all the areas in no way affecting the characteristics of the device in the chip and further on a scribe line or the like.
JP8095679A 1979-06-27 1979-06-27 Treatment of semiconductor substrate Pending JPS566432A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8095679A JPS566432A (en) 1979-06-27 1979-06-27 Treatment of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8095679A JPS566432A (en) 1979-06-27 1979-06-27 Treatment of semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS566432A true JPS566432A (en) 1981-01-23

Family

ID=13732951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8095679A Pending JPS566432A (en) 1979-06-27 1979-06-27 Treatment of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS566432A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844726A (en) * 1981-09-11 1983-03-15 Nippon Telegr & Teleph Corp <Ntt> Gettering method
US4951110A (en) * 1987-11-03 1990-08-21 Siemens Aktiengesellschaft Power semiconductor structural element with four layers
JP2015119111A (en) * 2013-12-19 2015-06-25 国立大学法人東京工業大学 Semiconductor device and manufacturing method of the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844726A (en) * 1981-09-11 1983-03-15 Nippon Telegr & Teleph Corp <Ntt> Gettering method
JPS6229894B2 (en) * 1981-09-11 1987-06-29 Nippon Telegraph & Telephone
US4951110A (en) * 1987-11-03 1990-08-21 Siemens Aktiengesellschaft Power semiconductor structural element with four layers
JP2015119111A (en) * 2013-12-19 2015-06-25 国立大学法人東京工業大学 Semiconductor device and manufacturing method of the same

Similar Documents

Publication Publication Date Title
US4131487A (en) Gettering semiconductor wafers with a high energy laser beam
EP0028737A3 (en) Method for high efficiency gettering contaminants and defects in a semiconductor body
JPS566432A (en) Treatment of semiconductor substrate
JPS55150239A (en) Heat treating method
JPS5638828A (en) Manufacture of semiconductor device
JPS6427231A (en) Manufacture of semiconductor device
JPS5635434A (en) Manufacturing of semiconductor device
JPS567439A (en) Treating method for semiconductor substrate
JPS567436A (en) High pressure treating device
JPS5633821A (en) Photoannealing method for semiconductor layer
JPS56126914A (en) Manufacture of semiconductor device
JPS5568638A (en) Treating method of semiconductor surface with heat
JPS55124237A (en) Semiconductor treatment device
JPS57136334A (en) Manufacture of semiconductor device
JPS57177530A (en) Processing of semiconductor wafer
JPS5721825A (en) Increasing method for gettering effect due to internal defect in semiconductor substrate
JPS57164532A (en) Gettering method
JPS5533020A (en) Manufacture of semiconductor device
JPS624316A (en) Annealing of semiconductor device
JPS56130914A (en) Manufacture of semiconductor device
JPS5680125A (en) Formation of monocrystalline semiconductor film
JPS55132037A (en) Manufacture of semiconductor device
JPS5534416A (en) Method of manufacturing semiconductor device
JPS53116771A (en) Production of semiconductor device
JPS5710939A (en) Manufacture of semiconductor device