JPS567436A - High pressure treating device - Google Patents

High pressure treating device

Info

Publication number
JPS567436A
JPS567436A JP8320979A JP8320979A JPS567436A JP S567436 A JPS567436 A JP S567436A JP 8320979 A JP8320979 A JP 8320979A JP 8320979 A JP8320979 A JP 8320979A JP S567436 A JPS567436 A JP S567436A
Authority
JP
Japan
Prior art keywords
vessel
wafer
pressure
high pressure
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8320979A
Other languages
Japanese (ja)
Inventor
Takanori Hayafuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP8320979A priority Critical patent/JPS567436A/en
Publication of JPS567436A publication Critical patent/JPS567436A/en
Priority to JP17612486A priority patent/JPS62229845A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To eliminate the need for taking notice of a heat resisting property of a pressure resisting vessel and simplify the structure of a furnace by a method wherein only a body to be treated in the pressure resisting vessel is heated. CONSTITUTION:A device is formed in such a manner that a semiconductor wafer 22 to be treated is housed in a high pressure vessel 21, on whose upper surface a transparent peep window 20 is attached, and laser beams 30 are irradiated only to the wafer 22 from the outside through the peep window 20. The area of the window 20 may be comparatively small fitting one. Such constitution results in a high temperature only near the surface of the wafer 22 because only the wafer 22 can be heated by the laser beams 30. Thus, the structure of a furnace is extremely simplified because the vessel 1 may resist only to pressure and can be designed without having no regard for the effect of heat.
JP8320979A 1979-06-29 1979-06-29 High pressure treating device Pending JPS567436A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8320979A JPS567436A (en) 1979-06-29 1979-06-29 High pressure treating device
JP17612486A JPS62229845A (en) 1979-06-29 1986-07-26 Vapor growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8320979A JPS567436A (en) 1979-06-29 1979-06-29 High pressure treating device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP17612486A Division JPS62229845A (en) 1979-06-29 1986-07-26 Vapor growth method

Publications (1)

Publication Number Publication Date
JPS567436A true JPS567436A (en) 1981-01-26

Family

ID=13795924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8320979A Pending JPS567436A (en) 1979-06-29 1979-06-29 High pressure treating device

Country Status (1)

Country Link
JP (1) JPS567436A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59131150U (en) * 1983-02-22 1984-09-03 三洋電機株式会社 Compound semiconductor heat treatment equipment
JPS61161711A (en) * 1985-01-11 1986-07-22 Denkoo:Kk Thermal treatment method of semiconductor and thermal treatment equipment
JPS6212947U (en) * 1985-07-08 1987-01-26
JPH027421A (en) * 1987-10-15 1990-01-11 Solems Sa Apparatus for manufacture of thin film by plasma deposition especially for electronic and/or optoelectronic technology device and its driving method
JP2002246327A (en) * 2001-02-21 2002-08-30 Semiconductor Energy Lab Co Ltd Heat treatment device and manufacturing method for semiconductor device
US6588232B1 (en) 1998-01-13 2003-07-08 Kabushiki Kaisha Toshiba Treatment device, laser annealing device, manufacturing apparatus, and manufacturing apparatus for flat display device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023570A (en) * 1973-06-29 1975-03-13
JPS5372572A (en) * 1976-12-10 1978-06-28 Mitsubishi Electric Corp Manufacturing device for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023570A (en) * 1973-06-29 1975-03-13
JPS5372572A (en) * 1976-12-10 1978-06-28 Mitsubishi Electric Corp Manufacturing device for semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59131150U (en) * 1983-02-22 1984-09-03 三洋電機株式会社 Compound semiconductor heat treatment equipment
JPS61161711A (en) * 1985-01-11 1986-07-22 Denkoo:Kk Thermal treatment method of semiconductor and thermal treatment equipment
JPS6212947U (en) * 1985-07-08 1987-01-26
JPH0510354Y2 (en) * 1985-07-08 1993-03-15
JPH027421A (en) * 1987-10-15 1990-01-11 Solems Sa Apparatus for manufacture of thin film by plasma deposition especially for electronic and/or optoelectronic technology device and its driving method
US6588232B1 (en) 1998-01-13 2003-07-08 Kabushiki Kaisha Toshiba Treatment device, laser annealing device, manufacturing apparatus, and manufacturing apparatus for flat display device
JP2002246327A (en) * 2001-02-21 2002-08-30 Semiconductor Energy Lab Co Ltd Heat treatment device and manufacturing method for semiconductor device

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