JPS5623784A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5623784A
JPS5623784A JP9974379A JP9974379A JPS5623784A JP S5623784 A JPS5623784 A JP S5623784A JP 9974379 A JP9974379 A JP 9974379A JP 9974379 A JP9974379 A JP 9974379A JP S5623784 A JPS5623784 A JP S5623784A
Authority
JP
Japan
Prior art keywords
chamber
valve
semiconductor
substrate
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9974379A
Other languages
Japanese (ja)
Other versions
JPH0338756B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP9974379A priority Critical patent/JPS5623784A/en
Publication of JPS5623784A publication Critical patent/JPS5623784A/en
Publication of JPH0338756B2 publication Critical patent/JPH0338756B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To substantially incorporate a semiconductor and an electrode into one united body by a method wherein a transparent electrode is formed on the surface of the semiconductor and then they are annealed by irradiating a laser beam or a similar high-powered optical energy. CONSTITUTION:After having formed the transparent electrode on the surface of the semiconductor, the following processes are performed to have them united in one body. Substrates 11-11'' which have been constituted as above are moved from an inlet chamber 20 to an outlet chamber 21 in a treatment chamber 23 using a loader, and the temperature inside the chamber 23 is maintained at 300-700 deg.C using a high-frequency induction furnace and a low-temperature annealing furnace 25 provided in the chamber 23. At the same time, H2 is run out from a valve 15, He from a valve 16 and HCl from a valve 17 and they are discharged by a vacuum pump 19 through an intermediate of a needle valve 18. Thus, the substrate 11 is heated, the laser beam emitted from a laser device 12, provided outside the chamber 23, is irradiated to the substrate 11 through a medium of a mirror 13 and a low- temperature annealing is performed.
JP9974379A 1979-08-05 1979-08-05 Manufacture of semiconductor device Granted JPS5623784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9974379A JPS5623784A (en) 1979-08-05 1979-08-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9974379A JPS5623784A (en) 1979-08-05 1979-08-05 Manufacture of semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP60124788A Division JPS6150329A (en) 1985-06-07 1985-06-07 Manufacture of semiconductor device
JP3033679A Division JPH04211130A (en) 1991-02-01 1991-02-01 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5623784A true JPS5623784A (en) 1981-03-06
JPH0338756B2 JPH0338756B2 (en) 1991-06-11

Family

ID=14255487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9974379A Granted JPS5623784A (en) 1979-08-05 1979-08-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5623784A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59144122A (en) * 1983-02-08 1984-08-18 Seiko Epson Corp Optical annealing method
JPS59154079A (en) * 1983-02-22 1984-09-03 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPS59155974A (en) * 1983-02-25 1984-09-05 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric converter
JPS60224282A (en) * 1984-04-20 1985-11-08 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS60227484A (en) * 1984-04-26 1985-11-12 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric conversion semiconductor device
JPS6158276A (en) * 1984-08-29 1986-03-25 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS61231771A (en) * 1985-04-05 1986-10-16 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6246514A (en) * 1985-08-24 1987-02-28 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6247116A (en) * 1985-08-26 1987-02-28 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing equipment
JPS6251210A (en) * 1985-08-30 1987-03-05 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6252924A (en) * 1985-09-01 1987-03-07 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6254422A (en) * 1985-08-08 1987-03-10 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6254448A (en) * 1985-08-02 1987-03-10 Semiconductor Energy Lab Co Ltd Measurement for semiconductor device
JPS6269608A (en) * 1985-09-24 1987-03-30 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH0263817A (en) * 1988-08-31 1990-03-05 Naigai Kaaboninki Kk Processing method of tack label paper
JPH03212976A (en) * 1990-01-18 1991-09-18 Agency Of Ind Science & Technol Treatment method of cis structure containing transparent conductive oxide film
JPH03227575A (en) * 1990-09-14 1991-10-08 Semiconductor Energy Lab Co Ltd Photoelectric conversion device

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59144122A (en) * 1983-02-08 1984-08-18 Seiko Epson Corp Optical annealing method
JPS59154079A (en) * 1983-02-22 1984-09-03 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPH0570311B2 (en) * 1983-02-22 1993-10-04 Handotai Energy Kenkyusho
JPS59155974A (en) * 1983-02-25 1984-09-05 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric converter
JPS60224282A (en) * 1984-04-20 1985-11-08 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS60227484A (en) * 1984-04-26 1985-11-12 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric conversion semiconductor device
JPS6158276A (en) * 1984-08-29 1986-03-25 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS61231771A (en) * 1985-04-05 1986-10-16 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6254448A (en) * 1985-08-02 1987-03-10 Semiconductor Energy Lab Co Ltd Measurement for semiconductor device
JPS6254422A (en) * 1985-08-08 1987-03-10 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6246514A (en) * 1985-08-24 1987-02-28 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6247116A (en) * 1985-08-26 1987-02-28 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing equipment
JPS6251210A (en) * 1985-08-30 1987-03-05 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6252924A (en) * 1985-09-01 1987-03-07 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6269608A (en) * 1985-09-24 1987-03-30 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH0263817A (en) * 1988-08-31 1990-03-05 Naigai Kaaboninki Kk Processing method of tack label paper
JPH03212976A (en) * 1990-01-18 1991-09-18 Agency Of Ind Science & Technol Treatment method of cis structure containing transparent conductive oxide film
JPH03227575A (en) * 1990-09-14 1991-10-08 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
JPH0558271B2 (en) * 1990-09-14 1993-08-26 Handotai Energy Kenkyusho

Also Published As

Publication number Publication date
JPH0338756B2 (en) 1991-06-11

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